IPD80R1K4P7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD80R1K4P7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 32 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 6.5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: TO252

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IPD80R1K4P7 datasheet

 ..1. Size:971K  infineon
 ipd80r1k4p7.pdf pdf_icon

IPD80R1K4P7

IPD80R1K4P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

 5.1. Size:2292K  infineon
 ipd80r1k4ce ipu80r1k4ce.pdf pdf_icon

IPD80R1K4P7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R1K4CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R1K4CE, IPU80R1K4CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine

 6.1. Size:2278K  infineon
 ipd80r1k0ce ipu80r1k0ce.pdf pdf_icon

IPD80R1K4P7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R1K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R1K0CE, IPU80R1K0CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine

 6.2. Size:243K  inchange semiconductor
 ipd80r1k0ce.pdf pdf_icon

IPD80R1K4P7

isc N-Channel MOSFET Transistor IPD80R1K0CE,IIPD80R1K0CE FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag

MOSTRAR MÁS

Otros transistores... IPD60R600PFD7S, IPD650P06NM, IPD70N12S3-11, IPD70N12S3L-12, IPD70P04P4L-08, IPD70R1K4P7S, IPD70R360P7S, IPD70R600P7S, P60NF06, IPD80R280P7, IPD80R2K0P7, IPD80R2K4P7, IPD80R2K7C3A, IPD80R360P7, IPD80R3K3P7, IPD80R450P7, IPD80R4K5P7