IPD80R1K4P7 Todos los transistores

 

IPD80R1K4P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD80R1K4P7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 6.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO252
 

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IPD80R1K4P7 Datasheet (PDF)

 ..1. Size:971K  infineon
 ipd80r1k4p7.pdf pdf_icon

IPD80R1K4P7

IPD80R1K4P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

 5.1. Size:2292K  infineon
 ipd80r1k4ce ipu80r1k4ce.pdf pdf_icon

IPD80R1K4P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R1K4CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R1K4CE, IPU80R1K4CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine

 6.1. Size:2278K  infineon
 ipd80r1k0ce ipu80r1k0ce.pdf pdf_icon

IPD80R1K4P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R1K0CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R1K0CE, IPU80R1K0CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine

 6.2. Size:243K  inchange semiconductor
 ipd80r1k0ce.pdf pdf_icon

IPD80R1K4P7

isc N-Channel MOSFET Transistor IPD80R1K0CE,IIPD80R1K0CEFEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

MOSTRAR MÁS

Otros transistores... IPD60R600PFD7S , IPD650P06NM , IPD70N12S3-11 , IPD70N12S3L-12 , IPD70P04P4L-08 , IPD70R1K4P7S , IPD70R360P7S , IPD70R600P7S , AO3401 , IPD80R280P7 , IPD80R2K0P7 , IPD80R2K4P7 , IPD80R2K7C3A , IPD80R360P7 , IPD80R3K3P7 , IPD80R450P7 , IPD80R4K5P7 .

History: SVS70R600FE3 | PE507BA | 2SK1658 | CEM2539 | OSG65R125KF | BSC076N06NS3G | TPC8212-H

 

 
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