IPD80R1K4P7 Specs and Replacement

Type Designator: IPD80R1K4P7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 6.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO252

IPD80R1K4P7 substitution

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IPD80R1K4P7 datasheet

 ..1. Size:971K  infineon
 ipd80r1k4p7.pdf pdf_icon

IPD80R1K4P7

IPD80R1K4P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and ... See More ⇒

 5.1. Size:2292K  infineon
 ipd80r1k4ce ipu80r1k4ce.pdf pdf_icon

IPD80R1K4P7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R1K4CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R1K4CE, IPU80R1K4CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine... See More ⇒

 6.1. Size:2278K  infineon
 ipd80r1k0ce ipu80r1k0ce.pdf pdf_icon

IPD80R1K4P7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R1K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R1K0CE, IPU80R1K0CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine... See More ⇒

 6.2. Size:243K  inchange semiconductor
 ipd80r1k0ce.pdf pdf_icon

IPD80R1K4P7

isc N-Channel MOSFET Transistor IPD80R1K0CE,IIPD80R1K0CE FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag... See More ⇒

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Detailed specifications: IPD60R600PFD7S, IPD650P06NM, IPD70N12S3-11, IPD70N12S3L-12, IPD70P04P4L-08, IPD70R1K4P7S, IPD70R360P7S, IPD70R600P7S, P60NF06, IPD80R280P7, IPD80R2K0P7, IPD80R2K4P7, IPD80R2K7C3A, IPD80R360P7, IPD80R3K3P7, IPD80R450P7, IPD80R4K5P7

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.