IPD900P06NM Datasheet. Equivalente

 ..1. Size:894K  infineon
 ipd900p06nm.pdf

IPD900P06NM MOSFET D-PAK OptiMOSTM Power Transistor, -60 V Features tab P-Channel Very low on-resistance R DS(on) 100% avalanche tested Normal Level Enhancement mode 1 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applications Drain tab Table 1 Ke

 9.1. Size:163K  infineon
 ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf

IPD90N06S4-04 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.8 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N06S4-04 PG-TO252-3-11 4N0604 Maximum ratings, a

 9.2. Size:163K  infineon
 ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf

IPD90N06S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.5 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-03 P

 9.3. Size:165K  infineon
 ipd90p03p4-04 ds 10.pdf

IPD90P03P4-04 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R 4.5 m DS(on) I -90 A D Features P-channel - Normal Level - Enhancement mode AEC qualified PG-TO252-3-11 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90P03P4-04 PG-TO252-3-11 4P0304 Maxim

 9.4. Size:164K  infineon
 ipd90p03p4l-04 ipd90p03p4l-04 ds 10.pdf

IPD90P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R 4.1 m DS(on) I -90 A D Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO252-3-11 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Intended for reverse battery protection Type Package Mark

 9.5. Size:184K  infineon
 ipd90n04s3-04 ds 1 0.pdf

IPD90N04S3-04 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 3.6 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S3-04 PG-TO252-3-11 QN0404 Max

 9.6. Size:152K  infineon
 ipd90n04s4-03 ipd90n04s4-03 ds 1 0.pdf

IPD90N04S4-03 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 3.2 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4-03 PG-TO252-3-313 4N0403 Maximum ratings,

 9.7. Size:154K  infineon
 ipd90n04s4-04 ipd90n04s4-04 ds 1 0.pdf

IPD90N04S4-04 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 4.1 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4-04 PG-TO252-3-313 4N0404 Maximum ratings,

 9.8. Size:129K  infineon
 ipd90p04p4-05 ds 10.pdf

IPD90P04P4-05 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R 4.7 m DS(on) I -90 A D Features P-channel - Normal Level - Enhancement mode AEC qualified PG-TO252-3-313 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90P04P4-05 PG-TO252-3-313 4P0405 Maxi

 9.9. Size:130K  infineon
 ipd90n10s4l-06.pdf

IPD90N10S4L-06 OptiMOSTM-T2 Power-Transistor Product Summary V 100 V DS R 6.6 mW DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified TAB MSL1 up to 260 C peak reflow 175 C operating temperature 1 3 Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N10S4L-06 PG-TO252-3-313 4N10L06 Max

 9.10. Size:163K  infineon
 ipd90n06s4-07 ipd90n06s4-07 ds 10.pdf

IPD90N06S4-07 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 6.9 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSon Type Package Marking IPD90N04S6-07 PG-TO252-3-11

 9.11. Size:163K  infineon
 ipd90n06s4-05 ipd90n06s4-05 ds 10.pdf

IPD90N06S4-05 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 5.1 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSon Type Package Marking IPD90N04S6-05 PG-TO252-3-11

 9.12. Size:415K  infineon
 ipd90p04p4-05.pdf

IPD90P04P4-05 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) 4.7 mW ID -90 A Features P-channel - Normal Level - Enhancement mode AEC qualified PG-TO252-3-313 MSL1 up to 260 C peak reflow Tab 175 C operating temperature Green package (RoHS compliant) 1 3 100% Avalanche tested Source pin 3 Gate pin 1 Type Package Marking Drain pin

 9.13. Size:162K  infineon
 ipd90n04s3-h4.pdf

IPD90N04S3-H4 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 4.3 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S3-H4 PG-TO252-3-11 QN04H4 Max

 9.14. Size:150K  infineon
 ipd90p04p4l-04.pdf

IPD90P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R 4.3 mW DS(on) I -90 A D Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO252-3-313 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90P04P4L-04 PG-TO252-3-313 4P04L04 Max

 9.15. Size:249K  infineon
 ipd90n08s4-05.pdf

IPD90N08S4-05 OptiMOS -T2 Power-Transistor Product Summary VDS 80 V RDS(on),max 5.3 mW ID 90 A Features PG-TO252-3-313 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N08S4-05 PG-TO252-3-313 4N0805 Maximum ratings, a

 9.16. Size:157K  infineon
 ipd90n03s4l-03 ipd90n03s4l-03 ds.pdf

IPD90N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 3.3 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N03S4L-03 PG-TO252-3-11 4N03L03

 9.17. Size:163K  infineon
 ipd90n06s4l-05 ipd90n06s4l-05 ds 10.pdf

IPD90N06S4L-05 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 4.6 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-05 PG-TO252-3-1

 9.18. Size:297K  infineon
 ipd90r1k2c3.pdf

IPD90R1K2C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25 C 1.2 DS(on),max J Extreme dv/dt rated Q 28 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO252 Ultra low gate charge CoolMOS 900V

 9.19. Size:154K  infineon
 ipd90n04s4l-04 ipd90n04s4l-04 ds 1 0.pdf

IPD90N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 3.8 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4L-04 PG-TO252-3-313 4N04L04 Maximum ratin

 9.20. Size:152K  infineon
 ipd90n04s4-02 ipd90n04s4-02 ds 1 0.pdf

IPD90N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 2.4 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4-02 PG-TO252-3-313 4N0402 Maximum ratings,

 9.21. Size:160K  infineon
 ipd90n03s4l-02 ipd90n03s4l-02 ds 3 0.pdf

IPD90N03S4L-02 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 2.2 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD90N03S4L-02

 9.22. Size:163K  infineon
 ipd90n06s4l-06 ipd90n06s4l-06 ds 10.pdf

IPD90N06S4L-06 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 6.3 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-06 P

 9.23. Size:260K  infineon
 ipd90n10s4-06.pdf

IPD90N10S4-06 OptiMOSTM-T2 Power-Transistor Product Summary VDS 100 V RDS(on),max 6.7 mW ID 90 A Features N-channel - Normal Level - Enhancement mode PG-TO252-3-313 AEC qualified TAB MSL1 up to 260 C peak reflow 175 C operating temperature 1 3 Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N10S4-06 PG-TO252-3-313 4N100

 9.24. Size:154K  infineon
 ipd90n04s4-05 ipd90n04s4-05 ds 1 0.pdf

IPD90N04S4-05 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 5.2 m DS(on),max I 86 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4-05 PG-TO252-3-313 4N0405 Maximum ratings,

 9.25. Size:243K  inchange semiconductor
 ipd90r1k2c3.pdf

isc N-Channel MOSFET Transistor IPD90R1K2C3,IIPD90R1K2C3 FEATURES Static drain-source on-resistance RDS(on) 1.2 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage