IPD900P06NM PDF and Equivalents Search

 

IPD900P06NM PDF Specs and Replacement


   Type Designator: IPD900P06NM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO252
 

 IPD900P06NM substitution

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IPD900P06NM PDF Specs

 ..1. Size:894K  infineon
ipd900p06nm.pdf pdf_icon

IPD900P06NM

IPD900P06NM MOSFET D-PAK OptiMOSTM Power Transistor, -60 V Features tab P-Channel Very low on-resistance R DS(on) 100% avalanche tested Normal Level Enhancement mode 1 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applications Drain tab Table 1 Ke... See More ⇒

 9.1. Size:163K  infineon
ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf pdf_icon

IPD900P06NM

IPD90N06S4-04 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.8 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N06S4-04 PG-TO252-3-11 4N0604 Maximum ratings, a... See More ⇒

 9.2. Size:163K  infineon
ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf pdf_icon

IPD900P06NM

IPD90N06S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.5 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-03 P... See More ⇒

 9.3. Size:165K  infineon
ipd90p03p4-04 ds 10.pdf pdf_icon

IPD900P06NM

IPD90P03P4-04 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R 4.5 m DS(on) I -90 A D Features P-channel - Normal Level - Enhancement mode AEC qualified PG-TO252-3-11 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90P03P4-04 PG-TO252-3-11 4P0304 Maxim... See More ⇒

Detailed specifications: IPD80R3K3P7 , IPD80R450P7 , IPD80R4K5P7 , IPD80R600P7 , IPD80R750P7 , IPD80R900P7 , IPD85P04P4-07 , IPD85P04P4L-06 , K2611 , IPD90N08S4-05 , IPD90N10S4-06 , IPD90N10S4L-06 , IPD90P04P4L-04 , IPD95R1K2P7 , IPD95R450P7 , IPD95R750P7 , IPDD60R050G7 .

Keywords - IPD900P06NM MOSFET specs

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