IPD900P06NM MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD900P06NM
Marking Code: 900P06NM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 16.4 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 27 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 160 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO252
IPD900P06NM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD900P06NM Datasheet (PDF)
ipd900p06nm.pdf
IPD900P06NMMOSFETD-PAKOptiMOSTM Power Transistor, -60 VFeaturestab P-Channel Very low on-resistance RDS(on) 100% avalanche tested Normal Level Enhancement mode1 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial ApplicationsDraintabTable 1 Ke
ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf
IPD90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.8mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N06S4-04 PG-TO252-3-11 4N0604Maximum ratings, a
ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf
IPD90N06S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.5mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-03 P
ipd90p03p4-04 ds 10.pdf
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ipd90p03p4l-04 ipd90p03p4l-04 ds 10.pdf
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ipd90n04s4-03 ipd90n04s4-03 ds 1 0.pdf
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ipd90n04s4-04 ipd90n04s4-04 ds 1 0.pdf
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ipd90p04p4-05 ds 10.pdf
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ipd90n10s4l-06.pdf
IPD90N10S4L-06OptiMOSTM-T2 Power-TransistorProduct SummaryV 100 VDSR 6.6mWDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualifiedTAB MSL1 up to 260C peak reflow 175C operating temperature13 Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N10S4L-06 PG-TO252-3-313 4N10L06Max
ipd90n06s4-07 ipd90n06s4-07 ds 10.pdf
IPD90N06S4-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 6.9mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSonType Package MarkingIPD90N04S6-07 PG-TO252-3-11
ipd90n06s4-05 ipd90n06s4-05 ds 10.pdf
IPD90N06S4-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 5.1mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSonType Package MarkingIPD90N04S6-05 PG-TO252-3-11
ipd90p04p4-05.pdf
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ipd90n04s3-h4.pdf
IPD90N04S3-H4OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 4.3mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S3-H4 PG-TO252-3-11 QN04H4Max
ipd90p04p4l-04.pdf
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ipd90n08s4-05.pdf
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ipd90n03s4l-03 ipd90n03s4l-03 ds.pdf
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ipd90n06s4l-05 ipd90n06s4l-05 ds 10.pdf
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ipd90r1k2c3.pdf
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ipd90n04s4l-04 ipd90n04s4l-04 ds 1 0.pdf
IPD90N04S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 3.8mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4L-04 PG-TO252-3-313 4N04L04Maximum ratin
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ipd90n03s4l-02 ipd90n03s4l-02 ds 3 0.pdf
IPD90N03S4L-02OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 2.2mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD90N03S4L-02
ipd90n06s4l-06 ipd90n06s4l-06 ds 10.pdf
IPD90N06S4L-06OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 6.3mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-06 P
ipd90n10s4-06.pdf
IPD90N10S4-06OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max 6.7mWID 90 AFeatures N-channel - Normal Level - Enhancement modePG-TO252-3-313 AEC qualifiedTAB MSL1 up to 260C peak reflow 175C operating temperature13 Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N10S4-06 PG-TO252-3-313 4N100
ipd90n04s4-05 ipd90n04s4-05 ds 1 0.pdf
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ipd90r1k2c3.pdf
isc N-Channel MOSFET Transistor IPD90R1K2C3,IIPD90R1K2C3FEATURESStatic drain-source on-resistance:RDS(on)1.2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
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