IPD90N08S4-05 Todos los transistores

 

IPD90N08S4-05 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD90N08S4-05
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 144 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 1400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0053 Ohm
   Paquete / Cubierta: TO252
 

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IPD90N08S4-05 Datasheet (PDF)

 ..1. Size:249K  infineon
 ipd90n08s4-05.pdf pdf_icon

IPD90N08S4-05

IPD90N08S4-05OptiMOS-T2 Power-TransistorProduct SummaryVDS 80 VRDS(on),max 5.3mWID 90 AFeaturesPG-TO252-3-313 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N08S4-05 PG-TO252-3-313 4N0805Maximum ratings, a

 7.1. Size:163K  infineon
 ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf pdf_icon

IPD90N08S4-05

IPD90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.8mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N06S4-04 PG-TO252-3-11 4N0604Maximum ratings, a

 7.2. Size:163K  infineon
 ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf pdf_icon

IPD90N08S4-05

IPD90N06S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.5mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-03 P

 7.3. Size:184K  infineon
 ipd90n04s3-04 ds 1 0.pdf pdf_icon

IPD90N08S4-05

IPD90N04S3-04OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 3.6mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S3-04 PG-TO252-3-11 QN0404Max

MOSTRAR MÁS

Otros transistores... IPD80R450P7 , IPD80R4K5P7 , IPD80R600P7 , IPD80R750P7 , IPD80R900P7 , IPD85P04P4-07 , IPD85P04P4L-06 , IPD900P06NM , 2SK3918 , IPD90N10S4-06 , IPD90N10S4L-06 , IPD90P04P4L-04 , IPD95R1K2P7 , IPD95R450P7 , IPD95R750P7 , IPDD60R050G7 , IPDD60R080G7 .

History: IXTP98N075T | SML100S11 | BRCS4614SC | SSF3637S

 

 
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