IPD90N08S4-05. Аналоги и основные параметры
Наименование производителя: IPD90N08S4-05
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 144 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 90 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 1400 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0053 Ohm
Тип корпуса: TO252
Аналог (замена) для IPD90N08S4-05
- подборⓘ MOSFET транзистора по параметрам
IPD90N08S4-05 даташит
..1. Size:249K infineon
ipd90n08s4-05.pdf 
IPD90N08S4-05 OptiMOS -T2 Power-Transistor Product Summary VDS 80 V RDS(on),max 5.3 mW ID 90 A Features PG-TO252-3-313 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N08S4-05 PG-TO252-3-313 4N0805 Maximum ratings, a
7.1. Size:163K infineon
ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf 
IPD90N06S4-04 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.8 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N06S4-04 PG-TO252-3-11 4N0604 Maximum ratings, a
7.2. Size:163K infineon
ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf 
IPD90N06S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.5 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-03 P
7.3. Size:184K infineon
ipd90n04s3-04 ds 1 0.pdf 
IPD90N04S3-04 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 3.6 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S3-04 PG-TO252-3-11 QN0404 Max
7.4. Size:152K infineon
ipd90n04s4-03 ipd90n04s4-03 ds 1 0.pdf 
IPD90N04S4-03 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 3.2 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4-03 PG-TO252-3-313 4N0403 Maximum ratings,
7.5. Size:154K infineon
ipd90n04s4-04 ipd90n04s4-04 ds 1 0.pdf 
IPD90N04S4-04 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 4.1 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4-04 PG-TO252-3-313 4N0404 Maximum ratings,
7.6. Size:163K infineon
ipd90n06s4-07 ipd90n06s4-07 ds 10.pdf 
IPD90N06S4-07 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 6.9 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSon Type Package Marking IPD90N04S6-07 PG-TO252-3-11
7.7. Size:163K infineon
ipd90n06s4-05 ipd90n06s4-05 ds 10.pdf 
IPD90N06S4-05 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 5.1 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSon Type Package Marking IPD90N04S6-05 PG-TO252-3-11
7.8. Size:162K infineon
ipd90n04s3-h4.pdf 
IPD90N04S3-H4 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 4.3 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S3-H4 PG-TO252-3-11 QN04H4 Max
7.9. Size:157K infineon
ipd90n03s4l-03 ipd90n03s4l-03 ds.pdf 
IPD90N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 3.3 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N03S4L-03 PG-TO252-3-11 4N03L03
7.10. Size:163K infineon
ipd90n06s4l-05 ipd90n06s4l-05 ds 10.pdf 
IPD90N06S4L-05 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 4.6 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-05 PG-TO252-3-1
7.11. Size:154K infineon
ipd90n04s4l-04 ipd90n04s4l-04 ds 1 0.pdf 
IPD90N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 3.8 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4L-04 PG-TO252-3-313 4N04L04 Maximum ratin
7.12. Size:152K infineon
ipd90n04s4-02 ipd90n04s4-02 ds 1 0.pdf 
IPD90N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 2.4 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4-02 PG-TO252-3-313 4N0402 Maximum ratings,
7.13. Size:160K infineon
ipd90n03s4l-02 ipd90n03s4l-02 ds 3 0.pdf 
IPD90N03S4L-02 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 2.2 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD90N03S4L-02
7.14. Size:163K infineon
ipd90n06s4l-06 ipd90n06s4l-06 ds 10.pdf 
IPD90N06S4L-06 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 6.3 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-06 P
7.15. Size:154K infineon
ipd90n04s4-05 ipd90n04s4-05 ds 1 0.pdf 
IPD90N04S4-05 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 5.2 m DS(on),max I 86 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4-05 PG-TO252-3-313 4N0405 Maximum ratings,
Другие MOSFET... IPD80R450P7
, IPD80R4K5P7
, IPD80R600P7
, IPD80R750P7
, IPD80R900P7
, IPD85P04P4-07
, IPD85P04P4L-06
, IPD900P06NM
, EMB04N03H
, IPD90N10S4-06
, IPD90N10S4L-06
, IPD90P04P4L-04
, IPD95R1K2P7
, IPD95R450P7
, IPD95R750P7
, IPDD60R050G7
, IPDD60R080G7
.
