IPD90N10S4L-06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD90N10S4L-06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 136 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 1620 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0066 Ohm

Encapsulados: TO252

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IPD90N10S4L-06 datasheet

 ..1. Size:130K  infineon
ipd90n10s4l-06.pdf pdf_icon

IPD90N10S4L-06

IPD90N10S4L-06 OptiMOSTM-T2 Power-Transistor Product Summary V 100 V DS R 6.6 mW DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified TAB MSL1 up to 260 C peak reflow 175 C operating temperature 1 3 Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N10S4L-06 PG-TO252-3-313 4N10L06 Max

 4.1. Size:260K  infineon
ipd90n10s4-06.pdf pdf_icon

IPD90N10S4L-06

IPD90N10S4-06 OptiMOSTM-T2 Power-Transistor Product Summary VDS 100 V RDS(on),max 6.7 mW ID 90 A Features N-channel - Normal Level - Enhancement mode PG-TO252-3-313 AEC qualified TAB MSL1 up to 260 C peak reflow 175 C operating temperature 1 3 Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N10S4-06 PG-TO252-3-313 4N100

 8.1. Size:163K  infineon
ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf pdf_icon

IPD90N10S4L-06

IPD90N06S4-04 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.8 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N06S4-04 PG-TO252-3-11 4N0604 Maximum ratings, a

 8.2. Size:163K  infineon
ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf pdf_icon

IPD90N10S4L-06

IPD90N06S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.5 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-03 P

Otros transistores... IPD80R600P7, IPD80R750P7, IPD80R900P7, IPD85P04P4-07, IPD85P04P4L-06, IPD900P06NM, IPD90N08S4-05, IPD90N10S4-06, MMIS60R580P, IPD90P04P4L-04, IPD95R1K2P7, IPD95R450P7, IPD95R750P7, IPDD60R050G7, IPDD60R080G7, IPDD60R125G7, IPDD60R150G7