IPD90N10S4L-06 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPD90N10S4L-06
Маркировка: 4N10L06
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 136 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
Пороговое напряжение включения |Ugs(th)|: 2.1 V
Максимально допустимый постоянный ток стока |Id|: 90 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 75 nC
Время нарастания (tr): 6 ns
Выходная емкость (Cd): 1620 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0066 Ohm
Тип корпуса: TO252
Аналог (замена) для IPD90N10S4L-06
IPD90N10S4L-06 Datasheet (PDF)
ipd90n10s4l-06.pdf
IPD90N10S4L-06OptiMOSTM-T2 Power-TransistorProduct SummaryV 100 VDSR 6.6mWDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualifiedTAB MSL1 up to 260C peak reflow 175C operating temperature13 Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N10S4L-06 PG-TO252-3-313 4N10L06Max
ipd90n10s4-06.pdf
IPD90N10S4-06OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max 6.7mWID 90 AFeatures N-channel - Normal Level - Enhancement modePG-TO252-3-313 AEC qualifiedTAB MSL1 up to 260C peak reflow 175C operating temperature13 Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N10S4-06 PG-TO252-3-313 4N100
ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf
IPD90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.8mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N06S4-04 PG-TO252-3-11 4N0604Maximum ratings, a
ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf
IPD90N06S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.5mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-03 P
ipd90n04s3-04 ds 1 0.pdf
IPD90N04S3-04OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 3.6mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S3-04 PG-TO252-3-11 QN0404Max
ipd90n04s4-03 ipd90n04s4-03 ds 1 0.pdf
IPD90N04S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 3.2mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-03 PG-TO252-3-313 4N0403Maximum ratings,
ipd90n04s4-04 ipd90n04s4-04 ds 1 0.pdf
IPD90N04S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 4.1mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-04 PG-TO252-3-313 4N0404Maximum ratings,
ipd90n06s4-07 ipd90n06s4-07 ds 10.pdf
IPD90N06S4-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 6.9mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSonType Package MarkingIPD90N04S6-07 PG-TO252-3-11
ipd90n06s4-05 ipd90n06s4-05 ds 10.pdf
IPD90N06S4-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 5.1mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSonType Package MarkingIPD90N04S6-05 PG-TO252-3-11
ipd90n04s3-h4.pdf
IPD90N04S3-H4OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 4.3mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S3-H4 PG-TO252-3-11 QN04H4Max
ipd90n08s4-05.pdf
IPD90N08S4-05OptiMOS-T2 Power-TransistorProduct SummaryVDS 80 VRDS(on),max 5.3mWID 90 AFeaturesPG-TO252-3-313 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N08S4-05 PG-TO252-3-313 4N0805Maximum ratings, a
ipd90n03s4l-03 ipd90n03s4l-03 ds.pdf
IPD90N03S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 3.3mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N03S4L-03 PG-TO252-3-11 4N03L03
ipd90n06s4l-05 ipd90n06s4l-05 ds 10.pdf
IPD90N06S4L-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 4.6mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-05 PG-TO252-3-1
ipd90n04s4l-04 ipd90n04s4l-04 ds 1 0.pdf
IPD90N04S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 3.8mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4L-04 PG-TO252-3-313 4N04L04Maximum ratin
ipd90n04s4-02 ipd90n04s4-02 ds 1 0.pdf
IPD90N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 2.4mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-02 PG-TO252-3-313 4N0402Maximum ratings,
ipd90n03s4l-02 ipd90n03s4l-02 ds 3 0.pdf
IPD90N03S4L-02OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 2.2mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD90N03S4L-02
ipd90n06s4l-06 ipd90n06s4l-06 ds 10.pdf
IPD90N06S4L-06OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 6.3mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-06 P
ipd90n04s4-05 ipd90n04s4-05 ds 1 0.pdf
IPD90N04S4-05OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 5.2mDS(on),maxI 86 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-05 PG-TO252-3-313 4N0405Maximum ratings,
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