IPDD60R050G7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPDD60R050G7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 278 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 47 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: HDSOP-10

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IPDD60R050G7 datasheet

 ..1. Size:1188K  infineon
 ipdd60r050g7.pdf pdf_icon

IPDD60R050G7

IPDD60R050G7 MOSFET PG-HDSOP-10-1 600V CoolMOS G7 Power Transistor The C7 GOLD series (G7) for the first time brings together the benefits of 10 9 8 the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and 7 6 the improved thermal properties of the DDPAK package to enable a possible SMD solution for high current topologies such as PFC up to 3kW. Pin 1 2 3 4 5 F

 6.1. Size:1150K  infineon
 ipdd60r080g7.pdf pdf_icon

IPDD60R050G7

IPDD60R080G7 MOSFET PG-HDSOP-10-1 600V CoolMOS G7 Power Transistor The C7 GOLD series (G7) for the first time brings together the benefits of 10 9 8 the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and 7 6 the improved thermal properties of the DDPAK package to enable a possible SMD solution for high current topologies such as PFC up to 3kW. Pin 1 2 3 4 5 F

 7.1. Size:1210K  infineon
 ipdd60r150g7.pdf pdf_icon

IPDD60R050G7

IPDD60R150G7 MOSFET PG-HDSOP-10-1 600V CoolMOS G7 Power Transistor The C7 GOLD series (G7) for the first time brings together the benefits of 10 9 8 the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and 7 6 the improved thermal properties of the DDPAK package to enable a possible SMD solution for high current topologies such as PFC up to 3kW. Pin 1 2 3 4 5 F

 7.2. Size:1156K  infineon
 ipdd60r125g7.pdf pdf_icon

IPDD60R050G7

IPDD60R125G7 MOSFET PG-HDSOP-10-1 600V CoolMOS G7 Power Transistor The C7 GOLD series (G7) for the first time brings together the benefits of 10 9 8 the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and 7 6 the improved thermal properties of the DDPAK package to enable a possible SMD solution for high current topologies such as PFC up to 3kW. Pin 1 2 3 4 5 F

MOSTRAR MÁS

Otros transistores... IPD900P06NM, IPD90N08S4-05, IPD90N10S4-06, IPD90N10S4L-06, IPD90P04P4L-04, IPD95R1K2P7, IPD95R450P7, IPD95R750P7, AO4468, IPDD60R080G7, IPDD60R125G7, IPDD60R150G7, IPF060N03LG, IPF075N03LG, IPG16N10S4-61A, IPG16N10S4L-61A, IPG20N04S4-18A