IPDD60R050G7 Datasheet and Replacement
Type Designator: IPDD60R050G7
Marking Code: 60R050G7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 68 nC
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: HDSOP-10
IPDD60R050G7 substitution
IPDD60R050G7 Datasheet (PDF)
ipdd60r050g7.pdf

IPDD60R050G7MOSFETPG-HDSOP-10-1600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits of1098the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and76the improved thermal properties of the DDPAK package to enable apossible SMD solution for high current topologies such as PFC up to 3kW.Pin 12345F
ipdd60r080g7.pdf

IPDD60R080G7MOSFETPG-HDSOP-10-1600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits of1098the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and76the improved thermal properties of the DDPAK package to enable apossible SMD solution for high current topologies such as PFC up to 3kW.Pin 12345F
ipdd60r150g7.pdf

IPDD60R150G7MOSFETPG-HDSOP-10-1600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits of1098the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and76the improved thermal properties of the DDPAK package to enable apossible SMD solution for high current topologies such as PFC up to 3kW.Pin 12345F
ipdd60r125g7.pdf

IPDD60R125G7MOSFETPG-HDSOP-10-1600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits of1098the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and76the improved thermal properties of the DDPAK package to enable apossible SMD solution for high current topologies such as PFC up to 3kW.Pin 12345F
Datasheet: IPD900P06NM , IPD90N08S4-05 , IPD90N10S4-06 , IPD90N10S4L-06 , IPD90P04P4L-04 , IPD95R1K2P7 , IPD95R450P7 , IPD95R750P7 , IRFP064N , IPDD60R080G7 , IPDD60R125G7 , IPDD60R150G7 , IPF060N03LG , IPF075N03LG , IPG16N10S4-61A , IPG16N10S4L-61A , IPG20N04S4-18A .
History: RU2H30R
Keywords - IPDD60R050G7 MOSFET datasheet
IPDD60R050G7 cross reference
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History: RU2H30R



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