IPDD60R080G7 Todos los transistores

 

IPDD60R080G7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPDD60R080G7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 174 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 29 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 34 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: HDSOP-10
     - Selección de transistores por parámetros

 

IPDD60R080G7 Datasheet (PDF)

 ..1. Size:1150K  infineon
 ipdd60r080g7.pdf pdf_icon

IPDD60R080G7

IPDD60R080G7MOSFETPG-HDSOP-10-1600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits of1098the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and76the improved thermal properties of the DDPAK package to enable apossible SMD solution for high current topologies such as PFC up to 3kW.Pin 12345F

 6.1. Size:1188K  infineon
 ipdd60r050g7.pdf pdf_icon

IPDD60R080G7

IPDD60R050G7MOSFETPG-HDSOP-10-1600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits of1098the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and76the improved thermal properties of the DDPAK package to enable apossible SMD solution for high current topologies such as PFC up to 3kW.Pin 12345F

 7.1. Size:1210K  infineon
 ipdd60r150g7.pdf pdf_icon

IPDD60R080G7

IPDD60R150G7MOSFETPG-HDSOP-10-1600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits of1098the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and76the improved thermal properties of the DDPAK package to enable apossible SMD solution for high current topologies such as PFC up to 3kW.Pin 12345F

 7.2. Size:1156K  infineon
 ipdd60r125g7.pdf pdf_icon

IPDD60R080G7

IPDD60R125G7MOSFETPG-HDSOP-10-1600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits of1098the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and76the improved thermal properties of the DDPAK package to enable apossible SMD solution for high current topologies such as PFC up to 3kW.Pin 12345F

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 20N03L-TO252 | RUH1H139R-A | BSZ12DN20NS3G | FRS240H | FQD10N20CTF | CS730A4RD | KI2312DS

 

 
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