IPDD60R080G7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPDD60R080G7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 174 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 29 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 34 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Paquete / Cubierta: HDSOP-10
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IPDD60R080G7 Datasheet (PDF)
ipdd60r080g7.pdf
IPDD60R080G7MOSFETPG-HDSOP-10-1600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits of1098the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and76the improved thermal properties of the DDPAK package to enable apossible SMD solution for high current topologies such as PFC up to 3kW.Pin 12345F
ipdd60r050g7.pdf
IPDD60R050G7MOSFETPG-HDSOP-10-1600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits of1098the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and76the improved thermal properties of the DDPAK package to enable apossible SMD solution for high current topologies such as PFC up to 3kW.Pin 12345F
ipdd60r150g7.pdf
IPDD60R150G7MOSFETPG-HDSOP-10-1600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits of1098the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and76the improved thermal properties of the DDPAK package to enable apossible SMD solution for high current topologies such as PFC up to 3kW.Pin 12345F
ipdd60r125g7.pdf
IPDD60R125G7MOSFETPG-HDSOP-10-1600V CoolMOS G7 Power TransistorThe C7 GOLD series (G7) for the first time brings together the benefits of1098the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and76the improved thermal properties of the DDPAK package to enable apossible SMD solution for high current topologies such as PFC up to 3kW.Pin 12345F
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918