IPDD60R080G7. Аналоги и основные параметры

Наименование производителя: IPDD60R080G7

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 174 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 29 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5 ns

Cossⓘ - Выходная емкость: 34 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm

Тип корпуса: HDSOP-10

Аналог (замена) для IPDD60R080G7

- подборⓘ MOSFET транзистора по параметрам

 

IPDD60R080G7 даташит

 ..1. Size:1150K  infineon
ipdd60r080g7.pdfpdf_icon

IPDD60R080G7

IPDD60R080G7 MOSFET PG-HDSOP-10-1 600V CoolMOS G7 Power Transistor The C7 GOLD series (G7) for the first time brings together the benefits of 10 9 8 the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and 7 6 the improved thermal properties of the DDPAK package to enable a possible SMD solution for high current topologies such as PFC up to 3kW. Pin 1 2 3 4 5 F

 6.1. Size:1188K  infineon
ipdd60r050g7.pdfpdf_icon

IPDD60R080G7

IPDD60R050G7 MOSFET PG-HDSOP-10-1 600V CoolMOS G7 Power Transistor The C7 GOLD series (G7) for the first time brings together the benefits of 10 9 8 the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and 7 6 the improved thermal properties of the DDPAK package to enable a possible SMD solution for high current topologies such as PFC up to 3kW. Pin 1 2 3 4 5 F

 7.1. Size:1210K  infineon
ipdd60r150g7.pdfpdf_icon

IPDD60R080G7

IPDD60R150G7 MOSFET PG-HDSOP-10-1 600V CoolMOS G7 Power Transistor The C7 GOLD series (G7) for the first time brings together the benefits of 10 9 8 the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and 7 6 the improved thermal properties of the DDPAK package to enable a possible SMD solution for high current topologies such as PFC up to 3kW. Pin 1 2 3 4 5 F

 7.2. Size:1156K  infineon
ipdd60r125g7.pdfpdf_icon

IPDD60R080G7

IPDD60R125G7 MOSFET PG-HDSOP-10-1 600V CoolMOS G7 Power Transistor The C7 GOLD series (G7) for the first time brings together the benefits of 10 9 8 the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and 7 6 the improved thermal properties of the DDPAK package to enable a possible SMD solution for high current topologies such as PFC up to 3kW. Pin 1 2 3 4 5 F

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