IPG20N04S4L-07A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPG20N04S4L-07A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 65 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 560 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm

Encapsulados: TDSON-8-10

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IPG20N04S4L-07A datasheet

 ..1. Size:156K  infineon
 ipg20n04s4l-07 ds 1 0.pdf pdf_icon

IPG20N04S4L-07A

IPG20N04S4L-07 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS 4) 7.2 mW R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N04S4L-07 PG-TDSON-8-4

 0.1. Size:197K  infineon
 ipg20n04s4l-07a.pdf pdf_icon

IPG20N04S4L-07A

IPG20N04S4L-07A OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on),max4) 7.2 m ID 20 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Typ

 1.1. Size:157K  infineon
 ipg20n04s4l-08 ipg20n04s4l-08 ds 1 0.pdf pdf_icon

IPG20N04S4L-07A

IPG20N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS 4) 8.2 mW R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N04S4L-08 PG-TDSON-8-4

 2.1. Size:156K  infineon
 ipg20n04s4l-11 ds 1 0.pdf pdf_icon

IPG20N04S4L-07A

IPG20N04S4L-11 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS 4) 11.6 mW R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N04S4L-11 PG-TDSON-8-4

MOSTRAR MÁS

Otros transistores... IPDD60R080G7, IPDD60R125G7, IPDD60R150G7, IPF060N03LG, IPF075N03LG, IPG16N10S4-61A, IPG16N10S4L-61A, IPG20N04S4-18A, 50N06, IPG20N04S4L-18A, IPG20N06S2L-50A, IPG20N06S2L-65A, IPG20N06S4L-11A, IPG20N06S4L-26A, IPG20N10S4-36A, IPG20N10S4L-22, IPG20N10S4L-22A