All MOSFET. IPG20N04S4L-07A Datasheet

 

IPG20N04S4L-07A Datasheet and Replacement


   Type Designator: IPG20N04S4L-07A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
   Package: TDSON-8-10
 

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IPG20N04S4L-07A Datasheet (PDF)

 ..1. Size:156K  infineon
 ipg20n04s4l-07 ds 1 0.pdf pdf_icon

IPG20N04S4L-07A

IPG20N04S4L-07OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDS4)7.2mWRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N04S4L-07 PG-TDSON-8-4

 0.1. Size:197K  infineon
 ipg20n04s4l-07a.pdf pdf_icon

IPG20N04S4L-07A

IPG20N04S4L-07AOptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on),max4) 7.2mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Typ

 1.1. Size:157K  infineon
 ipg20n04s4l-08 ipg20n04s4l-08 ds 1 0.pdf pdf_icon

IPG20N04S4L-07A

IPG20N04S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDS4)8.2mWRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N04S4L-08 PG-TDSON-8-4

 2.1. Size:156K  infineon
 ipg20n04s4l-11 ds 1 0.pdf pdf_icon

IPG20N04S4L-07A

IPG20N04S4L-11OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDS4)11.6mWRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N04S4L-11 PG-TDSON-8-4

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Datasheet: IPDD60R080G7 , IPDD60R125G7 , IPDD60R150G7 , IPF060N03LG , IPF075N03LG , IPG16N10S4-61A , IPG16N10S4L-61A , IPG20N04S4-18A , 50N06 , IPG20N04S4L-18A , IPG20N06S2L-50A , IPG20N06S2L-65A , IPG20N06S4L-11A , IPG20N06S4L-26A , IPG20N10S4-36A , IPG20N10S4L-22 , IPG20N10S4L-22A .

History: IPG20N10S4L-35A | IPD90N10S4-06 | CEB540L | IPG20N04S4-18A

Keywords - IPG20N04S4L-07A MOSFET datasheet

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