IPG20N06S4L-26A Todos los transistores

 

IPG20N06S4L-26A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPG20N06S4L-26A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 1.5 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: TDSON-8-10
 

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IPG20N06S4L-26A Datasheet (PDF)

 ..1. Size:144K  infineon
 ipg20n06s4l-26 ipg20n06s4l-26 ds 1 0.pdf pdf_icon

IPG20N06S4L-26A

IPG20N06S4L-26OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDS4)26mWRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S4L-26 PG-TDSON-8-4 4

 0.1. Size:196K  infineon
 ipg20n06s4l-26a.pdf pdf_icon

IPG20N06S4L-26A

IPG20N06S4L-26AOptiMOS-T2 Power-TransistorProduct SummaryVDS 60 VRDS(on),max4) 26mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type

 2.1. Size:158K  infineon
 ipg20n06s4l-14 ipg20n06s4l-14 ds 1 0.pdf pdf_icon

IPG20N06S4L-26A

IPG20N06S4L-14OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDS4)13.7mWRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S4L-14 PG-TDSON-8-4

 2.2. Size:294K  infineon
 ipg20n06s4l-11a.pdf pdf_icon

IPG20N06S4L-26A

IPG20N06S4L-11AOptiMOS-T2 Power-TransistorProduct SummaryVDS 60 VRDS(on),max4) 11.2mWID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Typ

MOSTRAR MÁS

Otros transistores... IPG16N10S4-61A , IPG16N10S4L-61A , IPG20N04S4-18A , IPG20N04S4L-07A , IPG20N04S4L-18A , IPG20N06S2L-50A , IPG20N06S2L-65A , IPG20N06S4L-11A , IRFP260N , IPG20N10S4-36A , IPG20N10S4L-22 , IPG20N10S4L-22A , IPG20N10S4L-35A , IPI08CN10NG , IPI100N12S3-05 , IPI120N08S4-03 , IPI120N08S4-04 .

History: NCEP015N85LL | IRF5805TRPBF | HCA70R180 | WMC1N40D1 | APT12040JVFR | IXFH60N60X2A | STL100N6LF6

 

 
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