IPG20N06S4L-26A Specs and Replacement

Type Designator: IPG20N06S4L-26A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.5 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: TDSON-8-10

IPG20N06S4L-26A substitution

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IPG20N06S4L-26A datasheet

 ..1. Size:144K  infineon
ipg20n06s4l-26 ipg20n06s4l-26 ds 1 0.pdf pdf_icon

IPG20N06S4L-26A

IPG20N06S4L-26 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS 4) 26 mW R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S4L-26 PG-TDSON-8-4 4... See More ⇒

 0.1. Size:196K  infineon
ipg20n06s4l-26a.pdf pdf_icon

IPG20N06S4L-26A

IPG20N06S4L-26A OptiMOS -T2 Power-Transistor Product Summary VDS 60 V RDS(on),max4) 26 m ID 20 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Type... See More ⇒

 2.1. Size:158K  infineon
ipg20n06s4l-14 ipg20n06s4l-14 ds 1 0.pdf pdf_icon

IPG20N06S4L-26A

IPG20N06S4L-14 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS 4) 13.7 mW R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S4L-14 PG-TDSON-8-4... See More ⇒

 2.2. Size:294K  infineon
ipg20n06s4l-11a.pdf pdf_icon

IPG20N06S4L-26A

IPG20N06S4L-11A OptiMOS -T2 Power-Transistor Product Summary VDS 60 V RDS(on),max4) 11.2 mW ID 20 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Typ... See More ⇒

Detailed specifications: IPG16N10S4-61A, IPG16N10S4L-61A, IPG20N04S4-18A, IPG20N04S4L-07A, IPG20N04S4L-18A, IPG20N06S2L-50A, IPG20N06S2L-65A, IPG20N06S4L-11A, IRLZ44N, IPG20N10S4-36A, IPG20N10S4L-22, IPG20N10S4L-22A, IPG20N10S4L-35A, IPI08CN10NG, IPI100N12S3-05, IPI120N08S4-03, IPI120N08S4-04

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.