IPG20N06S4L-26A MOSFET. Datasheet pdf. Equivalent

   Type Designator: IPG20N06S4L-26A
   Marking Code: 4N06L26
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 1.5 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TDSON-8-10

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