IPG20N10S4-36A Todos los transistores

 

IPG20N10S4-36A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPG20N10S4-36A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 43 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 1 nS
   Cossⓘ - Capacitancia de salida: 210 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
   Paquete / Cubierta: TDSON-8-10
     - Selección de transistores por parámetros

 

IPG20N10S4-36A Datasheet (PDF)

 ..1. Size:270K  infineon
 ipg20n10s4-36a.pdf pdf_icon

IPG20N10S4-36A

IPG20N10S4-36AOptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max4) 36mWID 20 AFeatures Dual N-channel Normal Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type

 4.1. Size:207K  infineon
 ipg20n10s4l-22a.pdf pdf_icon

IPG20N10S4-36A

IPG20N10S4L-22AOptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max4) 22mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Ty

 4.2. Size:191K  infineon
 ipg20n10s4l-22.pdf pdf_icon

IPG20N10S4-36A

IPG20N10S4L-22OptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max4) 22mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N10S4L-22 PG-TDSON-8-4 4N10L22

 4.3. Size:195K  infineon
 ipg20n10s4l-35a.pdf pdf_icon

IPG20N10S4-36A

IPG20N10S4L-35AOptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max4) 35mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Typ

MOSTRAR MÁS

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: NCE0250D | SGM3055 | IPI80CN10NG | CSD19535KTT | TTP105N08A | WSF20P03

 

 
Back to Top

 


 
.