IPG20N10S4-36A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPG20N10S4-36A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 43 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 1 nS

Cossⓘ - Capacitancia de salida: 210 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm

Encapsulados: TDSON-8-10

 Búsqueda de reemplazo de IPG20N10S4-36A MOSFET

- Selecciónⓘ de transistores por parámetros

 

IPG20N10S4-36A datasheet

 ..1. Size:270K  infineon
 ipg20n10s4-36a.pdf pdf_icon

IPG20N10S4-36A

IPG20N10S4-36A OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max4) 36 mW ID 20 A Features Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Type

 4.1. Size:207K  infineon
 ipg20n10s4l-22a.pdf pdf_icon

IPG20N10S4-36A

IPG20N10S4L-22A OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max4) 22 m ID 20 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Ty

 4.2. Size:191K  infineon
 ipg20n10s4l-22.pdf pdf_icon

IPG20N10S4-36A

IPG20N10S4L-22 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max4) 22 m ID 20 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N10S4L-22 PG-TDSON-8-4 4N10L22

 4.3. Size:195K  infineon
 ipg20n10s4l-35a.pdf pdf_icon

IPG20N10S4-36A

IPG20N10S4L-35A OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max4) 35 m ID 20 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Typ

MOSTRAR MÁS

Otros transistores... IPG16N10S4L-61A, IPG20N04S4-18A, IPG20N04S4L-07A, IPG20N04S4L-18A, IPG20N06S2L-50A, IPG20N06S2L-65A, IPG20N06S4L-11A, IPG20N06S4L-26A, IRFB4110, IPG20N10S4L-22, IPG20N10S4L-22A, IPG20N10S4L-35A, IPI08CN10NG, IPI100N12S3-05, IPI120N08S4-03, IPI120N08S4-04, IPI120N10S4-03