IPG20N10S4L-22 Todos los transistores

 

IPG20N10S4L-22 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPG20N10S4L-22
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TDSON-8-4
 

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IPG20N10S4L-22 Datasheet (PDF)

 ..1. Size:191K  infineon
ipg20n10s4l-22.pdf pdf_icon

IPG20N10S4L-22

IPG20N10S4L-22OptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max4) 22mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N10S4L-22 PG-TDSON-8-4 4N10L22

 0.1. Size:207K  infineon
ipg20n10s4l-22a.pdf pdf_icon

IPG20N10S4L-22

IPG20N10S4L-22AOptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max4) 22mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Ty

 2.1. Size:195K  infineon
ipg20n10s4l-35a.pdf pdf_icon

IPG20N10S4L-22

IPG20N10S4L-35AOptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max4) 35mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Typ

 4.1. Size:270K  infineon
ipg20n10s4-36a.pdf pdf_icon

IPG20N10S4L-22

IPG20N10S4-36AOptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max4) 36mWID 20 AFeatures Dual N-channel Normal Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type

Otros transistores... IPG20N04S4-18A , IPG20N04S4L-07A , IPG20N04S4L-18A , IPG20N06S2L-50A , IPG20N06S2L-65A , IPG20N06S4L-11A , IPG20N06S4L-26A , IPG20N10S4-36A , IRF630 , IPG20N10S4L-22A , IPG20N10S4L-35A , IPI08CN10NG , IPI100N12S3-05 , IPI120N08S4-03 , IPI120N08S4-04 , IPI120N10S4-03 , IPI120N10S4-05 .

History: 3N188 | IRFH5215PBF | SSM5H06FE | NDB610A | SWJ7N70D | IRF743FI | APM2055NU

 

 
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