IPG20N10S4L-22 Specs and Replacement

Type Designator: IPG20N10S4L-22

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TDSON-8-4

IPG20N10S4L-22 substitution

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IPG20N10S4L-22 datasheet

 ..1. Size:191K  infineon
 ipg20n10s4l-22.pdf pdf_icon

IPG20N10S4L-22

IPG20N10S4L-22 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max4) 22 m ID 20 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N10S4L-22 PG-TDSON-8-4 4N10L22... See More ⇒

 0.1. Size:207K  infineon
 ipg20n10s4l-22a.pdf pdf_icon

IPG20N10S4L-22

IPG20N10S4L-22A OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max4) 22 m ID 20 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Ty... See More ⇒

 2.1. Size:195K  infineon
 ipg20n10s4l-35a.pdf pdf_icon

IPG20N10S4L-22

IPG20N10S4L-35A OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max4) 35 m ID 20 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Typ... See More ⇒

 4.1. Size:270K  infineon
 ipg20n10s4-36a.pdf pdf_icon

IPG20N10S4L-22

IPG20N10S4-36A OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max4) 36 mW ID 20 A Features Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Type... See More ⇒

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Detailed specifications: IPG20N04S4-18A, IPG20N04S4L-07A, IPG20N04S4L-18A, IPG20N06S2L-50A, IPG20N06S2L-65A, IPG20N06S4L-11A, IPG20N06S4L-26A, IPG20N10S4-36A, IRF640N, IPG20N10S4L-22A, IPG20N10S4L-35A, IPI08CN10NG, IPI100N12S3-05, IPI120N08S4-03, IPI120N08S4-04, IPI120N10S4-03, IPI120N10S4-05

Keywords - IPG20N10S4L-22 MOSFET specs

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