IPI120P04P4-04 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPI120P04P4-04
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 136 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 20 nS
Cossⓘ - Capacitancia de salida: 3410 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
Encapsulados: TO262
Búsqueda de reemplazo de IPI120P04P4-04 MOSFET
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IPI120P04P4-04 datasheet
..1. Size:237K infineon
ipb120p04p4-04 ipi120p04p4-04 ipp120p04p4-04.pdf 
IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) (SMD Version) 3.5 mW ID -120 A Features P-channel - Normal Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested
3.1. Size:430K infineon
ipb120p04p4l-03 ipi120p04p4l-03 ipp120p04p4l-03.pdf
IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) (SMD Version) 3.1 mW ID -120 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche test
8.1. Size:225K infineon
ipb120n08s4-03 ipi120n08s4-03 ipp120n08s4-03.pdf
IPB120N08S4-03 IPI120N08S4-03, IPP120N08S4-03 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 2.5 mW DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
8.2. Size:170K infineon
ipb120n06s4-03 ipi120n06s4-03 ipp120n06s4-03 ipp120n06s4 ipb120n06s4 ipi120n06s4-03.pdf
IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.8 m DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche teste
8.3. Size:159K infineon
ipb120n04s4-02 ipi120n04s4-02 ipp120n04s4-02.pdf
IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.8 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty
8.4. Size:211K infineon
ipb120n08s4-04 ipi120n08s4-04 ipp120n08s4-04.pdf
IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 4.1 mW DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
8.5. Size:174K infineon
ipi120n06s4-h1 ipp120n06s4-h1 ipb120n06s4-h1.pdf
IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.1 m DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche teste
8.6. Size:170K infineon
ipb120n06s4-h1 ipi120n06s4-h1 ipp120n06s4-h1.pdf
IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.1 m DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche teste
8.7. Size:353K infineon
ipb120n10s4-03 ipi120n10s4-03 ipp120n10s4-03.pdf
IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max (SMD version) 3.5 mW ID 120 A Features N-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanch
8.8. Size:164K infineon
ipi120n04s4-02 ipp120n04s4-02 ipb120n04s4-02.pdf
IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.8 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty
8.9. Size:191K infineon
ipb120n04s3-02 ipi120n04s3-02 ipp120n04s3-02 ipp120n04s3 ipb120n04s3 ipi120n04s3-02.pdf
IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 2.0 m DS(on),max I 120 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rd
8.10. Size:170K infineon
ipb120n06s4-02 ipi120n06s4-02 ipp120n06s4-02 ipp120n06s4 ipb120n06s4 ipi120n06s4-02.pdf
IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.4 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty
8.11. Size:159K infineon
ipb120n04s4-01 ipi120n04s4-01 ipp120n04s4-01 ipp120n04s4-01 ipb120n04s4-01 ipi120n04s4-01.pdf
IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.5 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty
8.12. Size:386K infineon
ipb120n10s4-05 ipi120n10s4-05 ipp120n10s4-05.pdf
IPB120N10S4-05 IPI120N10S4-05, IPP120N10S4-05 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max (SMD version) 5.0 mW ID 120 A Features N-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanch
Otros transistores... IPG20N10S4L-22A, IPG20N10S4L-35A, IPI08CN10NG, IPI100N12S3-05, IPI120N08S4-03, IPI120N08S4-04, IPI120N10S4-03, IPI120N10S4-05, P55NF06, IPI120P04P4L-03, IPI16CN10NG, IPI50N12S3L-15, IPI70N12S3-11, IPI80N08S4-06, IPI80P03P4-05, IPI80P04P4-07, IPI80P04P4L-04
