IPI120P04P4-04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPI120P04P4-04
   Código: 4PP0404
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 136 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 158 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 3410 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
   Paquete / Cubierta: TO262

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IPI120P04P4-04 Datasheet (PDF)

..1. Size:237K infineon
ipb120p04p4-04 ipi120p04p4-04 ipp120p04p4-04.pdf

IPB120P04P4-04IPI120P04P4-04, IPP120P04P4-04OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 3.5mWID -120 AFeatures P-channel - Normal Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested

3.1. Size:430K infineon
ipb120p04p4l-03 ipi120p04p4l-03 ipp120p04p4l-03.pdf

IPB120P04P4L-03IPI120P04P4L-03, IPP120P04P4L-03OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 3.1mWID -120 AFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche test

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ipb120n08s4-03 ipi120n08s4-03 ipp120n08s4-03.pdf

IPB120N08S4-03IPI120N08S4-03, IPP120N08S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 2.5mWDS(on),maxI 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

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IPB120N06S4-03IPI120N06S4-03, IPP120N06S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.8mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

8.3. Size:159K infineon
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IPB120N04S4-02IPI120N04S4-02, IPP120N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 1.8mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

8.4. Size:211K infineon
ipb120n08s4-04 ipi120n08s4-04 ipp120n08s4-04.pdf

IPB120N08S4-04IPI120N08S4-04, IPP120N08S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 4.1mWDS(on),maxI 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

8.5. Size:174K infineon
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IPB120N06S4-H1IPI120N06S4-H1, IPP120N06S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.1mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

8.6. Size:170K infineon
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ipb120n10s4-03 ipi120n10s4-03 ipp120n10s4-03.pdf

IPB120N10S4-03IPI120N10S4-03, IPP120N10S4-03OptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max (SMD version) 3.5mWID 120 AFeatures N-channel - Normal Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanch

8.8. Size:164K infineon
ipi120n04s4-02 ipp120n04s4-02 ipb120n04s4-02.pdf

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IPB120N04S3-02IPI120N04S3-02, IPP120N04S3-02OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.0mDS(on),maxI 120 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rd

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IPB120N06S4-02IPI120N06S4-02, IPP120N06S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.4mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

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IPB120N04S4-01IPI120N04S4-01, IPP120N04S4-01OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 1.5mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

8.12. Size:386K infineon
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IPB120N10S4-05IPI120N10S4-05, IPP120N10S4-05OptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max (SMD version) 5.0mWID 120 AFeatures N-channel - Normal Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanch

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