Справочник MOSFET. IPI120P04P4-04

 

IPI120P04P4-04 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPI120P04P4-04
   Маркировка: 4PP0404
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 136 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 158 nC
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 3410 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0038 Ohm
   Тип корпуса: TO262
     - подбор MOSFET транзистора по параметрам

 

IPI120P04P4-04 Datasheet (PDF)

 ..1. Size:237K  infineon
ipb120p04p4-04 ipi120p04p4-04 ipp120p04p4-04.pdfpdf_icon

IPI120P04P4-04

IPB120P04P4-04IPI120P04P4-04, IPP120P04P4-04OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 3.5mWID -120 AFeatures P-channel - Normal Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested

 3.1. Size:430K  infineon
ipb120p04p4l-03 ipi120p04p4l-03 ipp120p04p4l-03.pdfpdf_icon

IPI120P04P4-04

IPB120P04P4L-03IPI120P04P4L-03, IPP120P04P4L-03OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 3.1mWID -120 AFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche test

 8.1. Size:225K  infineon
ipb120n08s4-03 ipi120n08s4-03 ipp120n08s4-03.pdfpdf_icon

IPI120P04P4-04

IPB120N08S4-03IPI120N08S4-03, IPP120N08S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 2.5mWDS(on),maxI 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 8.2. Size:170K  infineon
ipb120n06s4-03 ipi120n06s4-03 ipp120n06s4-03 ipp120n06s4 ipb120n06s4 ipi120n06s4-03.pdfpdf_icon

IPI120P04P4-04

IPB120N06S4-03IPI120N06S4-03, IPP120N06S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.8mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FDMS2508SDC | SML50J50 | ET8205 | WMB017N03LG2 | UF840KG-TA3-R | BF991 | NCEP068N10AK

 

 
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