IPI80P04P4L-04 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPI80P04P4L-04
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 2533 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
Paquete / Cubierta: TO262
Búsqueda de reemplazo de IPI80P04P4L-04 MOSFET
IPI80P04P4L-04 PDF Specs
ipb80p04p4l-04 ipi80p04p4l-04 ipp80p04p4l-04.pdf
IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) (SMD Version) 4.4 mW ID -80 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested ... See More ⇒
ipb80p04p4l-08 ipi80p04p4l-08 ipp80p04p4l-08.pdf
IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) (SMD Version) 7.9 mW ID -80 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested ... See More ⇒
ipb80p04p4-07 ipi80p04p4-07 ipp80p04p4-07.pdf
IPB80P04P4-07 IPI80P04P4-07, IPP80P04P4-07 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R (SMD Version) 7.4 mW DS(on) I -80 A D Features P-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche test... See More ⇒
ipi80p03p4l-04 ipp80p03p4l-04 ipb80p03p4l-04.pdf
IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R (SMD Version) 4.1 m DS(on) I -80 A D Features P-channel - Logic Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche... See More ⇒
Otros transistores... IPI120P04P4-04 , IPI120P04P4L-03 , IPI16CN10NG , IPI50N12S3L-15 , IPI70N12S3-11 , IPI80N08S4-06 , IPI80P03P4-05 , IPI80P04P4-07 , STP75NF75 , IPI80P04P4L-08 , IPL60R060CFD7 , IPL60R065C7 , IPL60R075CFD7 , IPL60R085P7 , IPL60R095CFD7 , IPL60R125P7 , IPL60R160CFD7 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP6007S | AP5N50K | AP5N20K | AP5N10S | AP5N10M | AP50P20Q | AP50P20K | AP50P06K | AP50N06K | AP50N04QD | AP50N04Q | AP50N04K | AP50N04GD | AP5040QD | AP4946S | AP4847
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