Справочник MOSFET. IPI80P04P4L-04

 

IPI80P04P4L-04 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPI80P04P4L-04
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 2533 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0047 Ohm
   Тип корпуса: TO262
 

 Аналог (замена) для IPI80P04P4L-04

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPI80P04P4L-04 Datasheet (PDF)

 ..1. Size:461K  infineon
ipb80p04p4l-04 ipi80p04p4l-04 ipp80p04p4l-04.pdfpdf_icon

IPI80P04P4L-04

IPB80P04P4L-04IPI80P04P4L-04, IPP80P04P4L-04OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 4.4mWID -80 AFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested

 1.1. Size:290K  infineon
ipb80p04p4l-08 ipi80p04p4l-08 ipp80p04p4l-08.pdfpdf_icon

IPI80P04P4L-04

IPB80P04P4L-08IPI80P04P4L-08, IPP80P04P4L-08OptiMOS-P2 Power-TransistorProduct SummaryVDS -40 VRDS(on) (SMD Version) 7.9mWID -80 AFeatures P-channel - Logic Level - Enhancement mode AEC qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested

 4.1. Size:225K  infineon
ipb80p04p4-07 ipi80p04p4-07 ipp80p04p4-07.pdfpdf_icon

IPI80P04P4L-04

IPB80P04P4-07IPI80P04P4-07, IPP80P04P4-07OptiMOS-P2 Power-TransistorProduct SummaryV -40 VDSR (SMD Version) 7.4mWDS(on)I -80 ADFeatures P-channel - Normal Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche test

 7.1. Size:173K  infineon
ipi80p03p4l-04 ipp80p03p4l-04 ipb80p03p4l-04.pdfpdf_icon

IPI80P04P4L-04

IPB80P03P4L-04IPI80P03P4L-04, IPP80P03P4L-04OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR (SMD Version) 4.1mDS(on) I -80 ADFeatures P-channel - Logic Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche

Другие MOSFET... IPI120P04P4-04 , IPI120P04P4L-03 , IPI16CN10NG , IPI50N12S3L-15 , IPI70N12S3-11 , IPI80N08S4-06 , IPI80P03P4-05 , IPI80P04P4-07 , 12N60 , IPI80P04P4L-08 , IPL60R060CFD7 , IPL60R065C7 , IPL60R075CFD7 , IPL60R085P7 , IPL60R095CFD7 , IPL60R125P7 , IPL60R160CFD7 .

History: WFD2N65L | IPN50R3K0CE | KF15N50N | NDB6051 | IPN80R1K2P7 | MMBT7002KW | STB9NK50Z

 

 
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