IPL60R125P7 Todos los transistores

 

IPL60R125P7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPL60R125P7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 111 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 27 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 26 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: VSON-4
 

 Búsqueda de reemplazo de IPL60R125P7 MOSFET

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Principales características: IPL60R125P7

 ..1. Size:1316K  infineon
ipl60r125p7.pdf pdf_icon

IPL60R125P7

IPL60R125P7 MOSFET ThinPAK 8x8 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS

 7.1. Size:1597K  infineon
ipl60r199cp.pdf pdf_icon

IPL60R125P7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS CP Power Transistor IPL60R199CP 1 Description The CoolMOS CP series offers devices which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely

 7.2. Size:1325K  infineon
ipl60r185p7.pdf pdf_icon

IPL60R125P7

IPL60R185P7 MOSFET ThinPAK 8x8 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS

 7.3. Size:1634K  infineon
ipl60r180p6.pdf pdf_icon

IPL60R125P7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPL60R180P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPL60R180P6 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and

Otros transistores... IPI80P04P4-07 , IPI80P04P4L-04 , IPI80P04P4L-08 , IPL60R060CFD7 , IPL60R065C7 , IPL60R075CFD7 , IPL60R085P7 , IPL60R095CFD7 , IRFP260 , IPL60R160CFD7 , IPL60R185C7 , IPL60R185P7 , IPL60R225CFD7 , IPLU250N04S4-1R7 , IPLU300N04S4-1R1 , IPLU300N04S4-R8 , IPN50R1K4CE .

 

 
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