IPL60R125P7 Datasheet and Replacement
Type Designator: IPL60R125P7
Marking Code: 60R125P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 111 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 36 nC
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 26 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: VSON-4
IPL60R125P7 substitution
IPL60R125P7 Datasheet (PDF)
ipl60r125p7.pdf

IPL60R125P7MOSFETThinPAK 8x8600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS
ipl60r199cp.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CP600V CoolMOS CP Power TransistorIPL60R199CP Data SheetRev. 2.0, 2010-10-01Final Industrial & Multimarket600V CoolMOS CP Power Transistor IPL60R199CP1 DescriptionThe CoolMOS CP series offers devices which provide all benefits of a fastswitching SJ MOSFET while not sacrificing ease of use. Extremely
ipl60r185p7.pdf

IPL60R185P7MOSFETThinPAK 8x8600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS
ipl60r180p6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPL60R180P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPL60R180P6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: IPW60R045P7 | IPA80R450P7
Keywords - IPL60R125P7 MOSFET datasheet
IPL60R125P7 cross reference
IPL60R125P7 equivalent finder
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History: IPW60R045P7 | IPA80R450P7



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