IPL60R225CFD7 Todos los transistores

 

IPL60R225CFD7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPL60R225CFD7

Código: 60R225F7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 68 W

Tensión drenaje-fuente |Vds|: 600 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4.5 V

Carga de compuerta (Qg): 23 nC

Tiempo de elevación (tr): 16.5 nS

Conductancia de drenaje-sustrato (Cd): 18 pF

Resistencia drenaje-fuente RDS(on): 0.225 Ohm

Empaquetado / Estuche: VSON-4

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IPL60R225CFD7 Datasheet (PDF)

0.1. ipl60r225cfd7.pdf Size:1239K _infineon

IPL60R225CFD7
IPL60R225CFD7

IPL60R225CFD7MOSFETThinPAK 8x8600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

7.1. ipl60r210p6.pdf Size:1607K _infineon

IPL60R225CFD7
IPL60R225CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPL60R210P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPL60R210P6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

7.2. ipl60r299cp.pdf Size:1592K _infineon

IPL60R225CFD7
IPL60R225CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CP600V CoolMOS CP Power TransistorIPL60R299CP Data SheetRev. 2.0, 2010-10-01Final Industrial & Multimarket600V CoolMOS CP Power Transistor IPL60R299CP1 DescriptionThe CoolMOS CP series offers devices which provide all benefits of a fastswitching SJ MOSFET while not sacrificing ease of use. Extremely

 7.3. ipl60r255p6.pdf Size:1618K _infineon

IPL60R225CFD7
IPL60R225CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPL60R255P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPL60R255P6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

7.4. ipl60r2k1c6s.pdf Size:1321K _infineon

IPL60R225CFD7
IPL60R225CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPL60R2K1C6SData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C6 Power TransistorIPL60R2K1C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

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