IPL60R225CFD7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPL60R225CFD7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 68 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16.5 nS
Cossⓘ - Capacitancia de salida: 18 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.225 Ohm
Paquete / Cubierta: VSON-4
Búsqueda de reemplazo de IPL60R225CFD7 MOSFET
Principales características: IPL60R225CFD7
ipl60r225cfd7.pdf
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPL60R255P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPL60R255P6 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and
ipl60r299cp.pdf
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ipl60r210p6.pdf
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Otros transistores... IPL60R065C7 , IPL60R075CFD7 , IPL60R085P7 , IPL60R095CFD7 , IPL60R125P7 , IPL60R160CFD7 , IPL60R185C7 , IPL60R185P7 , K4145 , IPLU250N04S4-1R7 , IPLU300N04S4-1R1 , IPLU300N04S4-R8 , IPN50R1K4CE , IPN50R3K0CE , IPN50R650CE , IPN50R800CE , IPN60R1K0PFD7S .
History: R6006JND3
History: R6006JND3
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