All MOSFET. IPL60R225CFD7 Datasheet

 

IPL60R225CFD7 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPL60R225CFD7

Marking Code: 60R225F7

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 68 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 23 nC

Rise Time (tr): 16.5 nS

Drain-Source Capacitance (Cd): 18 pF

Maximum Drain-Source On-State Resistance (Rds): 0.225 Ohm

Package: VSON-4

IPL60R225CFD7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPL60R225CFD7 Datasheet (PDF)

0.1. ipl60r225cfd7.pdf Size:1239K _infineon

IPL60R225CFD7
IPL60R225CFD7

IPL60R225CFD7MOSFETThinPAK 8x8600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

7.1. ipl60r210p6.pdf Size:1607K _infineon

IPL60R225CFD7
IPL60R225CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPL60R210P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPL60R210P6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

7.2. ipl60r299cp.pdf Size:1592K _infineon

IPL60R225CFD7
IPL60R225CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CP600V CoolMOS CP Power TransistorIPL60R299CP Data SheetRev. 2.0, 2010-10-01Final Industrial & Multimarket600V CoolMOS CP Power Transistor IPL60R299CP1 DescriptionThe CoolMOS CP series offers devices which provide all benefits of a fastswitching SJ MOSFET while not sacrificing ease of use. Extremely

 7.3. ipl60r255p6.pdf Size:1618K _infineon

IPL60R225CFD7
IPL60R225CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPL60R255P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPL60R255P6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

7.4. ipl60r2k1c6s.pdf Size:1321K _infineon

IPL60R225CFD7
IPL60R225CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPL60R2K1C6SData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C6 Power TransistorIPL60R2K1C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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