IPN60R2K0PFD7S Todos los transistores

 

IPN60R2K0PFD7S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPN60R2K0PFD7S
   Código: 60S2K0D7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 6 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 3 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 3.8 nC
   Tiempo de subida (tr): 7.2 nS
   Conductancia de drenaje-sustrato (Cd): 3 pF
   Resistencia entre drenaje y fuente RDS(on): 2 Ohm
   Paquete / Cubierta: SOT223

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IPN60R2K0PFD7S Datasheet (PDF)

 ..1. Size:713K  infineon
ipn60r2k0pfd7s.pdf

IPN60R2K0PFD7S IPN60R2K0PFD7S

IPN60R2K0PFD7SMOSFETPG-SOT223600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

 8.1. Size:1230K  infineon
ipn60r360p7s.pdf

IPN60R2K0PFD7S IPN60R2K0PFD7S

IPN60R360P7SMOSFETPG-SOT223600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF

 8.2. Size:1042K  infineon
ipn60r3k4ce.pdf

IPN60R2K0PFD7S IPN60R2K0PFD7S

IPN60R3K4CEMOSFETPG-SOT223600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 8.3. Size:1053K  infineon
ipn60r1k5ce.pdf

IPN60R2K0PFD7S IPN60R2K0PFD7S

IPN60R1K5CEMOSFETPG-SOT223600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 8.4. Size:723K  infineon
ipn60r360pfd7s.pdf

IPN60R2K0PFD7S IPN60R2K0PFD7S

IPN60R360PFD7SMOSFETPG-SOT223600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

 8.5. Size:1223K  infineon
ipn60r600p7s.pdf

IPN60R2K0PFD7S IPN60R2K0PFD7S

IPN60R600P7SMOSFETPG-SOT223600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF

 8.6. Size:1048K  infineon
ipn60r1k0pfd7s.pdf

IPN60R2K0PFD7S IPN60R2K0PFD7S

IPN60R1K0PFD7SMOSFETPG-SOT223600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

 8.7. Size:1077K  infineon
ipn60r600pfd7s.pdf

IPN60R2K0PFD7S IPN60R2K0PFD7S

IPN60R600PFD7SMOSFETPG-SOT223600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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