IPN60R2K0PFD7S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPN60R2K0PFD7S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 7.2 nS
   Cossⓘ - Capacitancia de salida: 3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: SOT223

Búsqueda de reemplazo de MOSFET IPN60R2K0PFD7S

IPN60R2K0PFD7S Datasheet (PDF)

..1. Size:713K infineon
ipn60r2k0pfd7s.pdf

IPN60R2K0PFD7SMOSFETPG-SOT223600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

8.1. Size:1230K infineon
ipn60r360p7s.pdf

IPN60R360P7SMOSFETPG-SOT223600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF

8.2. Size:1042K infineon
ipn60r3k4ce.pdf

IPN60R3K4CEMOSFETPG-SOT223600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

8.3. Size:1053K infineon
ipn60r1k5ce.pdf

IPN60R1K5CEMOSFETPG-SOT223600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

8.4. Size:723K infineon
ipn60r360pfd7s.pdf

IPN60R360PFD7SMOSFETPG-SOT223600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

8.5. Size:1223K infineon
ipn60r600p7s.pdf

IPN60R600P7SMOSFETPG-SOT223600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF

8.6. Size:1048K infineon
ipn60r1k0pfd7s.pdf

IPN60R1K0PFD7SMOSFETPG-SOT223600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

8.7. Size:1077K infineon
ipn60r600pfd7s.pdf

IPN60R600PFD7SMOSFETPG-SOT223600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

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