IPN60R2K0PFD7S MOSFET. Datasheet pdf. Equivalent
Type Designator: IPN60R2K0PFD7S
Marking Code: 60S2K0D7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.8 nC
trⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 3 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT223
IPN60R2K0PFD7S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPN60R2K0PFD7S Datasheet (PDF)
ipn60r2k0pfd7s.pdf
IPN60R2K0PFD7SMOSFETPG-SOT223600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d
ipn60r360p7s.pdf
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ipn60r3k4ce.pdf
IPN60R3K4CEMOSFETPG-SOT223600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high
ipn60r1k5ce.pdf
IPN60R1K5CEMOSFETPG-SOT223600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high
ipn60r360pfd7s.pdf
IPN60R360PFD7SMOSFETPG-SOT223600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d
ipn60r600p7s.pdf
IPN60R600P7SMOSFETPG-SOT223600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF
ipn60r1k0pfd7s.pdf
IPN60R1K0PFD7SMOSFETPG-SOT223600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d
ipn60r600pfd7s.pdf
IPN60R600PFD7SMOSFETPG-SOT223600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
