IPN60R600P7S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPN60R600P7S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 7 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 7 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Encapsulados: SOT223
Búsqueda de reemplazo de IPN60R600P7S MOSFET
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IPN60R600P7S datasheet
ipn60r600p7s.pdf
IPN60R600P7S MOSFET PG-SOT223 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF
ipn60r600pfd7s.pdf
IPN60R600PFD7S MOSFET PG-SOT223 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d
ipn60r2k0pfd7s.pdf
IPN60R2K0PFD7S MOSFET PG-SOT223 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d
ipn60r360p7s.pdf
IPN60R360P7S MOSFET PG-SOT223 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF
Otros transistores... IPN50R650CE, IPN50R800CE, IPN60R1K0PFD7S, IPN60R1K5CE, IPN60R2K0PFD7S, IPN60R360P7S, IPN60R360PFD7S, IPN60R3K4CE, TK10A60D, IPN60R600PFD7S, IPN65R1K5CE, IPN70R1K0CE, IPN70R1K2P7S, IPN70R1K4P7S, IPN70R1K5CE, IPN70R2K0P7S, IPN70R2K1CE
History: IPN60R600PFD7S | IPN70R1K5CE | SIHFP22N60K
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