IPN60R600P7S Todos los transistores

 

IPN60R600P7S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPN60R600P7S
   Código: 60S600
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 9 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: SOT223
 

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IPN60R600P7S Datasheet (PDF)

 ..1. Size:1223K  infineon
 ipn60r600p7s.pdf pdf_icon

IPN60R600P7S

IPN60R600P7SMOSFETPG-SOT223600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF

 4.1. Size:1077K  infineon
 ipn60r600pfd7s.pdf pdf_icon

IPN60R600P7S

IPN60R600PFD7SMOSFETPG-SOT223600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

 8.1. Size:713K  infineon
 ipn60r2k0pfd7s.pdf pdf_icon

IPN60R600P7S

IPN60R2K0PFD7SMOSFETPG-SOT223600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

 8.2. Size:1230K  infineon
 ipn60r360p7s.pdf pdf_icon

IPN60R600P7S

IPN60R360P7SMOSFETPG-SOT223600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF

MOSTRAR MÁS

Otros transistores... IPN50R650CE , IPN50R800CE , IPN60R1K0PFD7S , IPN60R1K5CE , IPN60R2K0PFD7S , IPN60R360P7S , IPN60R360PFD7S , IPN60R3K4CE , IRFZ24N , IPN60R600PFD7S , IPN65R1K5CE , IPN70R1K0CE , IPN70R1K2P7S , IPN70R1K4P7S , IPN70R1K5CE , IPN70R2K0P7S , IPN70R2K1CE .

 

 
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