All MOSFET. IPN60R600P7S Datasheet

 

IPN60R600P7S Datasheet and Replacement


   Type Designator: IPN60R600P7S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: SOT223
      - MOSFET Cross-Reference Search

 

IPN60R600P7S Datasheet (PDF)

 ..1. Size:1223K  infineon
ipn60r600p7s.pdf pdf_icon

IPN60R600P7S

IPN60R600P7SMOSFETPG-SOT223600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF

 4.1. Size:1077K  infineon
ipn60r600pfd7s.pdf pdf_icon

IPN60R600P7S

IPN60R600PFD7SMOSFETPG-SOT223600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

 8.1. Size:713K  infineon
ipn60r2k0pfd7s.pdf pdf_icon

IPN60R600P7S

IPN60R2K0PFD7SMOSFETPG-SOT223600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

 8.2. Size:1230K  infineon
ipn60r360p7s.pdf pdf_icon

IPN60R600P7S

IPN60R360P7SMOSFETPG-SOT223600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STD6N60M2 | IRFP21N60L | AP2318GEN-HF | STT3P2UH7 | UPA2756GR | IXTA08N120P

Keywords - IPN60R600P7S MOSFET datasheet

 IPN60R600P7S cross reference
 IPN60R600P7S equivalent finder
 IPN60R600P7S lookup
 IPN60R600P7S substitution
 IPN60R600P7S replacement

 

 
Back to Top

 


 
.