IPN70R1K4P7S Todos los transistores

 

IPN70R1K4P7S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPN70R1K4P7S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 6.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.9 nS
   Cossⓘ - Capacitancia de salida: 3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: SOT223
     - Selección de transistores por parámetros

 

IPN70R1K4P7S Datasheet (PDF)

 ..1. Size:1010K  infineon
 ipn70r1k4p7s.pdf pdf_icon

IPN70R1K4P7S

IPN70R1K4P7SMOSFETPG-SOT223700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

 6.1. Size:1056K  infineon
 ipn70r1k0ce.pdf pdf_icon

IPN70R1K4P7S

IPN70R1K0CEMOSFETPG-SOT223700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 6.2. Size:1055K  infineon
 ipn70r1k5ce.pdf pdf_icon

IPN70R1K4P7S

IPN70R1K5CEMOSFETPG-SOT223700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 6.3. Size:1022K  infineon
 ipn70r1k2p7s.pdf pdf_icon

IPN70R1K4P7S

IPN70R1K2P7SMOSFETPG-SOT223700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF7353D2 | CEB18N5 | 24NM60G-T3B-T | 2N65L-TMS4-T | AONV180A60 | AP9576GH | WPM1488

 

 
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