All MOSFET. IPN70R1K4P7S Datasheet

 

IPN70R1K4P7S Datasheet and Replacement


   Type Designator: IPN70R1K4P7S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.9 nS
   Cossⓘ - Output Capacitance: 3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: SOT223
 

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IPN70R1K4P7S Datasheet (PDF)

 ..1. Size:1010K  infineon
 ipn70r1k4p7s.pdf pdf_icon

IPN70R1K4P7S

IPN70R1K4P7SMOSFETPG-SOT223700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

 6.1. Size:1056K  infineon
 ipn70r1k0ce.pdf pdf_icon

IPN70R1K4P7S

IPN70R1K0CEMOSFETPG-SOT223700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 6.2. Size:1055K  infineon
 ipn70r1k5ce.pdf pdf_icon

IPN70R1K4P7S

IPN70R1K5CEMOSFETPG-SOT223700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 6.3. Size:1022K  infineon
 ipn70r1k2p7s.pdf pdf_icon

IPN70R1K4P7S

IPN70R1K2P7SMOSFETPG-SOT223700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

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Datasheet: IPN60R360P7S , IPN60R360PFD7S , IPN60R3K4CE , IPN60R600P7S , IPN60R600PFD7S , IPN65R1K5CE , IPN70R1K0CE , IPN70R1K2P7S , IRF1407 , IPN70R1K5CE , IPN70R2K0P7S , IPN70R2K1CE , IPN70R360P7S , IPN70R600P7S , IPN70R750P7S , IPN70R900P7S , IPN80R1K2P7 .

History: SIHL620 | DMN3008SFG | DMN25D0UFA | IPN65R1K5CE

Keywords - IPN70R1K4P7S MOSFET datasheet

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