IPN70R2K0P7S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPN70R2K0P7S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.5 nS

Cossⓘ - Capacitancia de salida: 2 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm

Encapsulados: SOT223

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IPN70R2K0P7S datasheet

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IPN70R2K0P7S

IPN70R2K0P7S MOSFET PG-SOT223 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV

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 ipn70r2k1ce.pdf pdf_icon

IPN70R2K0P7S

IPN70R2K1CE MOSFET PG-SOT223 700V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

 8.1. Size:1056K  infineon
 ipn70r1k0ce.pdf pdf_icon

IPN70R2K0P7S

IPN70R1K0CE MOSFET PG-SOT223 700V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

 8.2. Size:1055K  infineon
 ipn70r1k5ce.pdf pdf_icon

IPN70R2K0P7S

IPN70R1K5CE MOSFET PG-SOT223 700V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

MOSTRAR MÁS

Otros transistores... IPN60R3K4CE, IPN60R600P7S, IPN60R600PFD7S, IPN65R1K5CE, IPN70R1K0CE, IPN70R1K2P7S, IPN70R1K4P7S, IPN70R1K5CE, 10N65, IPN70R2K1CE, IPN70R360P7S, IPN70R600P7S, IPN70R750P7S, IPN70R900P7S, IPN80R1K2P7, IPN80R1K4P7, IPN80R2K4P7