Справочник MOSFET. IPN70R2K0P7S

 

IPN70R2K0P7S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPN70R2K0P7S
   Маркировка: 70S2K0
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 6 W
   Предельно допустимое напряжение сток-исток |Uds|: 700 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
   Пороговое напряжение включения |Ugs(th)|: 3.5 V
   Максимально допустимый постоянный ток стока |Id|: 3 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 3.8 nC
   Время нарастания (tr): 5.5 ns
   Выходная емкость (Cd): 2 pf
   Сопротивление сток-исток открытого транзистора (Rds): 2 Ohm
   Тип корпуса: SOT223

 Аналог (замена) для IPN70R2K0P7S

 

 

IPN70R2K0P7S Datasheet (PDF)

 ..1. Size:1008K  infineon
ipn70r2k0p7s.pdf

IPN70R2K0P7S
IPN70R2K0P7S

IPN70R2K0P7SMOSFETPG-SOT223700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

 6.1. Size:1040K  infineon
ipn70r2k1ce.pdf

IPN70R2K0P7S
IPN70R2K0P7S

IPN70R2K1CEMOSFETPG-SOT223700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 8.1. Size:1056K  infineon
ipn70r1k0ce.pdf

IPN70R2K0P7S
IPN70R2K0P7S

IPN70R1K0CEMOSFETPG-SOT223700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 8.2. Size:1055K  infineon
ipn70r1k5ce.pdf

IPN70R2K0P7S
IPN70R2K0P7S

IPN70R1K5CEMOSFETPG-SOT223700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 8.3. Size:1001K  infineon
ipn70r600p7s.pdf

IPN70R2K0P7S
IPN70R2K0P7S

IPN70R600P7SMOSFETPG-SOT223700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

 8.4. Size:1023K  infineon
ipn70r900p7s.pdf

IPN70R2K0P7S
IPN70R2K0P7S

IPN70R900P7SMOSFETPG-SOT223700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

 8.5. Size:1022K  infineon
ipn70r1k2p7s.pdf

IPN70R2K0P7S
IPN70R2K0P7S

IPN70R1K2P7SMOSFETPG-SOT223700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

 8.6. Size:1008K  infineon
ipn70r360p7s.pdf

IPN70R2K0P7S
IPN70R2K0P7S

IPN70R360P7SMOSFETPG-SOT223700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

 8.7. Size:1010K  infineon
ipn70r1k4p7s.pdf

IPN70R2K0P7S
IPN70R2K0P7S

IPN70R1K4P7SMOSFETPG-SOT223700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

 8.8. Size:1027K  infineon
ipn70r750p7s.pdf

IPN70R2K0P7S
IPN70R2K0P7S

IPN70R750P7SMOSFETPG-SOT223700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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