IPP60R210CFD7 Todos los transistores

 

IPP60R210CFD7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP60R210CFD7
   Código: 60R210F7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 64 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 23 nC
   trⓘ - Tiempo de subida: 16.5 nS
   Cossⓘ - Capacitancia de salida: 18 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET IPP60R210CFD7

 

IPP60R210CFD7 Datasheet (PDF)

 ..1. Size:1665K  infineon
ipp60r210cfd7.pdf

IPP60R210CFD7
IPP60R210CFD7

IPP60R210CFD7MOSFETPG-TO 220600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching application

 7.1. Size:2632K  infineon
ipb60r230p6 ipw60r230p6 ipb60r230p6 ipp60r230p6 ipa60r230p6.pdf

IPP60R210CFD7
IPP60R210CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R230P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R230P6, IPB60R230P6, IPP60R230P6,IPA60R230P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

 7.2. Size:2865K  infineon
ipa60r280p6 ipp60r280p6 ipw60r280p6.pdf

IPP60R210CFD7
IPP60R210CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R280P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R280P6, IPP60R280P6, IPA60R280P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 7.3. Size:1451K  infineon
ipp60r280c6.pdf

IPP60R210CFD7
IPP60R210CFD7

MOSFET+ =L9D - PA

 7.4. Size:548K  infineon
ipp60r299cp.pdf

IPP60R210CFD7
IPP60R210CFD7

IPP60R299CPCIMOS #:A0:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compoundPGTO220 ::7!"%

 7.5. Size:1666K  infineon
ipp60r280p7.pdf

IPP60R210CFD7
IPP60R210CFD7

IPP60R280P7MOSFETPG-TO 220600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

 7.6. Size:2886K  infineon
ipa60r230p6 ipp60r230p6 ipw60r230p6.pdf

IPP60R210CFD7
IPP60R210CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R230P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R230P6, IPP60R230P6, IPA60R230P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 7.7. Size:1012K  infineon
ipp60r280e6 ipa60r280e6 ipw60r280e6.pdf

IPP60R210CFD7
IPP60R210CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R280E6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS E6 Power Transistor IPP60R280E6, IPA60R280E6IPW60R280E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) pri

 7.8. Size:1718K  infineon
ipp60r280cfd7.pdf

IPP60R210CFD7
IPP60R210CFD7

IPP60R280CFD7MOSFETPG-TO 220600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching application

 7.9. Size:1975K  infineon
ipp60r280e6 2.0.pdf

IPP60R210CFD7
IPP60R210CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R280E6Data SheetRev. 2.0, 2010-04-09FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R280E6, IPA60R280E6IPW60R280E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)

 7.10. Size:3109K  infineon
ipw60r230p6 ipb60r230p6 ipp60r230p6 ipa60r230p6.pdf

IPP60R210CFD7
IPP60R210CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R230P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R230P6, IPB60R230P6, IPP60R230P6,IPA60R230P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

 7.11. Size:622K  infineon
ipp60r250cp.pdf

IPP60R210CFD7
IPP60R210CFD7

IPP60R250CPCIMOSTM #:A0:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compoundPGTO220 ::

 7.12. Size:2621K  infineon
ipw60r280p6 ipb60r280p6 ipp60r280p6 ipa60r280p6.pdf

IPP60R210CFD7
IPP60R210CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R280P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R280P6, IPB60R280P6, IPP60R280P6,IPA60R280P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

 7.13. Size:1587K  infineon
ipa60r280c6 ipb60r280c6 ipi60r280c6 ipp60r280c6 ipw60r280c6.pdf

IPP60R210CFD7
IPP60R210CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R280C6Data SheetRev. 2.2FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R280C6, IPB60R280C6IPI60R280C6, IPP60R280C6IPW60R280C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

 7.14. Size:245K  inchange semiconductor
ipp60r230p6.pdf

IPP60R210CFD7
IPP60R210CFD7

isc N-Channel MOSFET Transistor IPP60R230P6IIPP60R230P6FEATURESStatic drain-source on-resistance:RDS(on) 0.23Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of use

 7.15. Size:245K  inchange semiconductor
ipp60r280c6.pdf

IPP60R210CFD7
IPP60R210CFD7

isc N-Channel MOSFET Transistor IPP60R280C6IIPP60R280C6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of use

 7.16. Size:245K  inchange semiconductor
ipp60r299cp.pdf

IPP60R210CFD7
IPP60R210CFD7

isc N-Channel MOSFET Transistor IPP60R299CPIIPP60R299CPFEATURESStatic drain-source on-resistance:RDS(on) 0.299Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)

 7.17. Size:245K  inchange semiconductor
ipp60r280p7.pdf

IPP60R210CFD7
IPP60R210CFD7

isc N-Channel MOSFET Transistor IPP60R280P7IIPP60R280P7FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombines the benefits of a fast switching SJ MOSFET with excellentease of useABSOLUTE MA

 7.18. Size:246K  inchange semiconductor
ipp60r280cfd7.pdf

IPP60R210CFD7
IPP60R210CFD7

isc N-Channel MOSFET Transistor IPP60R280CFD7,IIPP60R280CFD7FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONThis new product series blends all advantages of a fast switchingtechnology together with

 7.19. Size:245K  inchange semiconductor
ipp60r250cp.pdf

IPP60R210CFD7
IPP60R210CFD7

isc N-Channel MOSFET Transistor IPP60R250CPIIPP60R250CPFEATURESStatic drain-source on-resistance:RDS(on) 0.25Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 7.20. Size:245K  inchange semiconductor
ipp60r280e6.pdf

IPP60R210CFD7
IPP60R210CFD7

isc N-Channel MOSFET Transistor IPP60R280E6IIPP60R280E6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL

 7.21. Size:245K  inchange semiconductor
ipp60r280p6.pdf

IPP60R210CFD7
IPP60R210CFD7

isc N-Channel MOSFET Transistor IPP60R280P6IIPP60R280P6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of use

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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