IPP60R210CFD7 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP60R210CFD7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 64 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 16.5 nS
Cossⓘ - Capacitancia de salida: 18 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm
Encapsulados: TO220
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IPP60R210CFD7 datasheet
..1. Size:1665K infineon
ipp60r210cfd7.pdf 
IPP60R210CFD7 MOSFET PG-TO 220 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching application
7.1. Size:2632K infineon
ipb60r230p6 ipw60r230p6 ipb60r230p6 ipp60r230p6 ipa60r230p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R230P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R230P6, IPB60R230P6, IPP60R230P6, IPA60R230P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,
7.2. Size:2865K infineon
ipa60r280p6 ipp60r280p6 ipw60r280p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R280P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R280P6, IPP60R280P6, IPA60R280P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi
7.4. Size:548K infineon
ipp60r299cp.pdf
IPP60R299CP C IMOS # A0 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound PG TO220 7!"%
7.5. Size:1666K infineon
ipp60r280p7.pdf
IPP60R280P7 MOSFET PG-TO 220 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ
7.6. Size:2886K infineon
ipa60r230p6 ipp60r230p6 ipw60r230p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R230P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R230P6, IPP60R230P6, IPA60R230P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi
7.7. Size:1012K infineon
ipp60r280e6 ipa60r280e6 ipw60r280e6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R280E6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS E6 Power Transistor IPP60R280E6, IPA60R280E6 IPW60R280E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) pri
7.8. Size:1718K infineon
ipp60r280cfd7.pdf
IPP60R280CFD7 MOSFET PG-TO 220 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching application
7.9. Size:1975K infineon
ipp60r280e6 2.0.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R280E6 Data Sheet Rev. 2.0, 2010-04-09 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R280E6, IPA60R280E6 IPW60R280E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ)
7.10. Size:3109K infineon
ipw60r230p6 ipb60r230p6 ipp60r230p6 ipa60r230p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R230P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R230P6, IPB60R230P6, IPP60R230P6, IPA60R230P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,
7.11. Size:622K infineon
ipp60r250cp.pdf
IPP60R250CP C IMOSTM # A0 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound PG TO220
7.12. Size:2621K infineon
ipw60r280p6 ipb60r280p6 ipp60r280p6 ipa60r280p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R280P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R280P6, IPB60R280P6, IPP60R280P6, IPA60R280P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,
7.13. Size:1587K infineon
ipa60r280c6 ipb60r280c6 ipi60r280c6 ipp60r280c6 ipw60r280c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R280C6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6 IPW60R280C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according
7.14. Size:245K inchange semiconductor
ipp60r230p6.pdf
isc N-Channel MOSFET Transistor IPP60R230P6 IIPP60R230P6 FEATURES Static drain-source on-resistance RDS(on) 0.23 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use
7.15. Size:245K inchange semiconductor
ipp60r280c6.pdf
isc N-Channel MOSFET Transistor IPP60R280C6 IIPP60R280C6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use
7.16. Size:245K inchange semiconductor
ipp60r299cp.pdf
isc N-Channel MOSFET Transistor IPP60R299CP IIPP60R299CP FEATURES Static drain-source on-resistance RDS(on) 0.299 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 )
7.17. Size:245K inchange semiconductor
ipp60r280p7.pdf
isc N-Channel MOSFET Transistor IPP60R280P7 IIPP60R280P7 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ABSOLUTE MA
7.18. Size:246K inchange semiconductor
ipp60r280cfd7.pdf
isc N-Channel MOSFET Transistor IPP60R280CFD7,IIPP60R280CFD7 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION This new product series blends all advantages of a fast switching technology together with
7.19. Size:245K inchange semiconductor
ipp60r250cp.pdf
isc N-Channel MOSFET Transistor IPP60R250CP IIPP60R250CP FEATURES Static drain-source on-resistance RDS(on) 0.25 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a
7.20. Size:245K inchange semiconductor
ipp60r280e6.pdf
isc N-Channel MOSFET Transistor IPP60R280E6 IIPP60R280E6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOL
7.21. Size:245K inchange semiconductor
ipp60r280p6.pdf
isc N-Channel MOSFET Transistor IPP60R280P6 IIPP60R280P6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use
Otros transistores... IPP120P04P4L-03, IPP17N25S3-100, IPP50N12S3L-15, IPP60R022S7, IPP60R090CFD7, IPP60R105CFD7, IPP60R120P7, IPP60R160P7, RU7088R, IPP70N12S3-11, IPP80N08S4-06, IPP80P03P4-05, IPP80P04P4-07, IPP80P04P4L-04, IPP80P04P4L-08, IPP80R360P7, IPP80R450P7
