IPP60R210CFD7 Datasheet. Specs and Replacement
Type Designator: IPP60R210CFD7
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 64 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16.5 nS
Cossⓘ -
Output Capacitance: 18 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: TO220
IPP60R210CFD7 substitution
- MOSFET ⓘ Cross-Reference Search
IPP60R210CFD7 datasheet
..1. Size:1665K infineon
ipp60r210cfd7.pdf 
IPP60R210CFD7 MOSFET PG-TO 220 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching application... See More ⇒
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ipb60r230p6 ipw60r230p6 ipb60r230p6 ipp60r230p6 ipa60r230p6.pdf
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ipp60r299cp.pdf
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ipp60r280p7.pdf
IPP60R280P7 MOSFET PG-TO 220 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ ... See More ⇒
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ipp60r280cfd7.pdf
IPP60R280CFD7 MOSFET PG-TO 220 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching application... See More ⇒
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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R280E6 Data Sheet Rev. 2.0, 2010-04-09 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R280E6, IPA60R280E6 IPW60R280E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ)... See More ⇒
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ipp60r250cp.pdf
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7.14. Size:245K inchange semiconductor
ipp60r230p6.pdf
isc N-Channel MOSFET Transistor IPP60R230P6 IIPP60R230P6 FEATURES Static drain-source on-resistance RDS(on) 0.23 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒
7.15. Size:245K inchange semiconductor
ipp60r280c6.pdf
isc N-Channel MOSFET Transistor IPP60R280C6 IIPP60R280C6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒
7.16. Size:245K inchange semiconductor
ipp60r299cp.pdf
isc N-Channel MOSFET Transistor IPP60R299CP IIPP60R299CP FEATURES Static drain-source on-resistance RDS(on) 0.299 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
7.17. Size:245K inchange semiconductor
ipp60r280p7.pdf
isc N-Channel MOSFET Transistor IPP60R280P7 IIPP60R280P7 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ABSOLUTE MA... See More ⇒
7.18. Size:246K inchange semiconductor
ipp60r280cfd7.pdf
isc N-Channel MOSFET Transistor IPP60R280CFD7,IIPP60R280CFD7 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION This new product series blends all advantages of a fast switching technology together with ... See More ⇒
7.19. Size:245K inchange semiconductor
ipp60r250cp.pdf
isc N-Channel MOSFET Transistor IPP60R250CP IIPP60R250CP FEATURES Static drain-source on-resistance RDS(on) 0.25 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
7.20. Size:245K inchange semiconductor
ipp60r280e6.pdf
isc N-Channel MOSFET Transistor IPP60R280E6 IIPP60R280E6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOL... See More ⇒
7.21. Size:245K inchange semiconductor
ipp60r280p6.pdf
isc N-Channel MOSFET Transistor IPP60R280P6 IIPP60R280P6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒
Detailed specifications: IPP120P04P4L-03, IPP17N25S3-100, IPP50N12S3L-15, IPP60R022S7, IPP60R090CFD7, IPP60R105CFD7, IPP60R120P7, IPP60R160P7, RU7088R, IPP70N12S3-11, IPP80N08S4-06, IPP80P03P4-05, IPP80P04P4-07, IPP80P04P4L-04, IPP80P04P4L-08, IPP80R360P7, IPP80R450P7
Keywords - IPP60R210CFD7 MOSFET specs
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