IPS60R360PFD7S Todos los transistores

 

IPS60R360PFD7S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPS60R360PFD7S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 43 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 12 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
   Paquete / Cubierta: TO251
 

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IPS60R360PFD7S Datasheet (PDF)

 ..1. Size:643K  infineon
 ips60r360pfd7s.pdf pdf_icon

IPS60R360PFD7S

IPS60R360PFD7SMOSFETIPAK SL600V CoolMOS PFD7 SJ Power DevicetabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,moto

 7.1. Size:1375K  infineon
 ipd60r3k4ce ipu60r3k4ce ips60r3k4ce.pdf pdf_icon

IPS60R360PFD7S

IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CEMOSFETDPAK IPAK IPAK SL600V CoolMOS CE Power TransistortabtabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 11233price-performance optimized platform enabling to target cost sensitivea

 7.2. Size:261K  inchange semiconductor
 ips60r3k4ce.pdf pdf_icon

IPS60R360PFD7S

isc N-Channel MOSFET Transistor IPS60R3K4CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.1. Size:1345K  infineon
 ipd60r400ce ips60r400ce ipa60r400ce.pdf pdf_icon

IPS60R360PFD7S

IPD60R400CE, IPS60R400CE, IPA60R400CEMOSFETDPAK IPAK SL PG-TO 220 FP600V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplica

MOSTRAR MÁS

Otros transistores... IPP80R450P7 , IPP80R750P7 , IPP80R900P7 , IPS60R1K0CE , IPS60R1K0PFD7S , IPS60R210PFD7S , IPS60R280PFD7S , IPS60R2K1CE , IRF640 , IPS60R600PFD7S , IPS70R1K4P7S , IPS70R360P7S , IPS70R600P7S , IPS70R900P7S , IPS80R1K2P7 , IPS80R1K4P7 , IPS80R2K0P7 .

 

 
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