IPS60R360PFD7S Datasheet. Specs and Replacement

Type Designator: IPS60R360PFD7S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO251

IPS60R360PFD7S substitution

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IPS60R360PFD7S datasheet

 ..1. Size:643K  infineon
 ips60r360pfd7s.pdf pdf_icon

IPS60R360PFD7S

IPS60R360PFD7S MOSFET IPAK SL 600V CoolMOS PFD7 SJ Power Device tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, moto... See More ⇒

 7.1. Size:1375K  infineon
 ipd60r3k4ce ipu60r3k4ce ips60r3k4ce.pdf pdf_icon

IPS60R360PFD7S

IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CE MOSFET DPAK IPAK IPAK SL 600V CoolMOS CE Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 1 2 3 3 price-performance optimized platform enabling to target cost sensitive a... See More ⇒

 7.2. Size:261K  inchange semiconductor
 ips60r3k4ce.pdf pdf_icon

IPS60R360PFD7S

isc N-Channel MOSFET Transistor IPS60R3K4CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒

 8.1. Size:1345K  infineon
 ipd60r400ce ips60r400ce ipa60r400ce.pdf pdf_icon

IPS60R360PFD7S

IPD60R400CE, IPS60R400CE, IPA60R400CE MOSFET DPAK IPAK SL PG-TO 220 FP 600V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applica... See More ⇒

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Detailed specifications: IPP80R450P7, IPP80R750P7, IPP80R900P7, IPS60R1K0CE, IPS60R1K0PFD7S, IPS60R210PFD7S, IPS60R280PFD7S, IPS60R2K1CE, IRFP460, IPS60R600PFD7S, IPS70R1K4P7S, IPS70R360P7S, IPS70R600P7S, IPS70R900P7S, IPS80R1K2P7, IPS80R1K4P7, IPS80R2K0P7

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