IPS80R1K4P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPS80R1K4P7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 32 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 6.5 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Paquete / Cubierta: TO251
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IPS80R1K4P7 Datasheet (PDF)
ips80r1k4p7.pdf
IPS80R1K4P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r1k2p7.pdf
IPS80R1K2P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r2k4p7.pdf
IPS80R2K4P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
ips80r900p7.pdf
IPS80R900P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C
Otros transistores... IPS60R2K1CE , IPS60R360PFD7S , IPS60R600PFD7S , IPS70R1K4P7S , IPS70R360P7S , IPS70R600P7S , IPS70R900P7S , IPS80R1K2P7 , 10N60 , IPS80R2K0P7 , IPS80R2K4P7 , IPS80R600P7 , IPS80R750P7 , IPS80R900P7 , IPSA70R1K2P7S , IPSA70R1K4CE , IPSA70R1K4P7S .
History: NCE3N170T
History: NCE3N170T
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