Справочник MOSFET. IPS80R1K4P7

 

IPS80R1K4P7 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPS80R1K4P7
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 32 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 6.5 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: TO251
     - подбор MOSFET транзистора по параметрам

 

IPS80R1K4P7 Datasheet (PDF)

 ..1. Size:962K  infineon
 ips80r1k4p7.pdf pdf_icon

IPS80R1K4P7

IPS80R1K4P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

 6.1. Size:962K  infineon
 ips80r1k2p7.pdf pdf_icon

IPS80R1K4P7

IPS80R1K2P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

 8.1. Size:950K  infineon
 ips80r2k4p7.pdf pdf_icon

IPS80R1K4P7

IPS80R2K4P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

 8.2. Size:951K  infineon
 ips80r900p7.pdf pdf_icon

IPS80R1K4P7

IPS80R900P7MOSFETIPAK SL800V CoolMOS P7 Power TransistortabThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

ПОКАЗАТЬ ЕЩЁ

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History: SM9926 | IPP60R160P6 | IRF820SPBF | AP9871GH-HF | 10N70 | AOP605 | WMO35P06TS

 

 
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