IPSA70R1K2P7S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPSA70R1K2P7S
Código: 70S1K2P7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 25 W
Voltaje máximo drenador - fuente |Vds|: 700 V
Voltaje máximo fuente - puerta |Vgs|: 16 V
Corriente continua de drenaje |Id|: 4.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
Carga de la puerta (Qg): 4.8 nC
Tiempo de subida (tr): 4.8 nS
Conductancia de drenaje-sustrato (Cd): 3.6 pF
Resistencia entre drenaje y fuente RDS(on): 1.2 Ohm
Paquete / Cubierta: TO251
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