IPSA70R1K2P7S MOSFET. Datasheet pdf. Equivalent
Type Designator: IPSA70R1K2P7S
Marking Code: 70S1K2P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.8 nC
trⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 3.6 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO251
IPSA70R1K2P7S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPSA70R1K2P7S Datasheet (PDF)
ipsa70r1k2p7s.pdf
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ipsa70r1k4ce.pdf
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ipsa70r1k4p7s.pdf
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ipsa70r900p7s.pdf
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ipsa70r2k0p7s.pdf
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ipsa70r600ce.pdf
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ipsa70r600p7s.pdf
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ipsa70r2k0ce.pdf
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ipsa70r750p7s.pdf
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ipsa70r450p7s.pdf
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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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