IPSA70R2K0P7S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPSA70R2K0P7S
   Código: 70S2K0P7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 17.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 3.8 nC
   trⓘ - Tiempo de subida: 5.5 nS
   Cossⓘ - Capacitancia de salida: 2.4 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: TO251

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IPSA70R2K0P7S Datasheet (PDF)

..1. Size:868K infineon
ipsa70r2k0p7s.pdf

IPSA70R2K0P7SMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charge

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ipsa70r2k0ce.pdf

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ipsa70r1k2p7s.pdf

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ipsa70r900p7s.pdf

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ipsa70r600ce.pdf

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ipsa70r1k4ce.pdf

IPSA70R1K4CEMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting mark

7.5. Size:865K infineon
ipsa70r600p7s.pdf

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7.6. Size:870K infineon
ipsa70r360p7s ipsa70r360p7s 70s360p7.pdf

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ipsa70r750p7s.pdf

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ipsa70r450p7s.pdf

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ipsa70r1k4p7s.pdf

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