All MOSFET. IPSA70R2K0P7S Datasheet

 

IPSA70R2K0P7S Datasheet and Replacement


   Type Designator: IPSA70R2K0P7S
   Marking Code: 70S2K0P7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 17.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 3.8 nC
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 2.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO251
 

 IPSA70R2K0P7S substitution

   - MOSFET ⓘ Cross-Reference Search

 

IPSA70R2K0P7S Datasheet (PDF)

 ..1. Size:868K  infineon
 ipsa70r2k0p7s.pdf pdf_icon

IPSA70R2K0P7S

IPSA70R2K0P7SMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charge

 4.1. Size:1086K  infineon
 ipsa70r2k0ce.pdf pdf_icon

IPSA70R2K0P7S

IPSA70R2K0CEMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting mark

 7.1. Size:882K  infineon
 ipsa70r1k2p7s.pdf pdf_icon

IPSA70R2K0P7S

IPSA70R1K2P7SMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charge

 7.2. Size:884K  infineon
 ipsa70r900p7s.pdf pdf_icon

IPSA70R2K0P7S

IPSA70R900P7SMOSFETIPAK-short lead with ISO-Standoff700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charge

SHOW MORE

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPB60R180P7 | IPD80R1K4P7

Keywords - IPSA70R2K0P7S MOSFET datasheet

 IPSA70R2K0P7S cross reference
 IPSA70R2K0P7S equivalent finder
 IPSA70R2K0P7S lookup
 IPSA70R2K0P7S substitution
 IPSA70R2K0P7S replacement

 

 
Back to Top

 


 
.