IPT019N08N5 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPT019N08N5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 231 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 247 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 1100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0019 Ohm

Encapsulados: HSOF-8

 Búsqueda de reemplazo de IPT019N08N5 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IPT019N08N5 datasheet

 ..1. Size:674K  infineon
 ipt019n08n5.pdf pdf_icon

IPT019N08N5

IPT019N08N5 MOSFET HSOF OptiMOSTM 5 Power-Transistor, 80 V Features Tab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 1 N-channel, normal level 2 3 4 5 100% avalanche tested 6 7 8 Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product vali

 9.1. Size:1178K  infineon
 ipt012n08n5.pdf pdf_icon

IPT019N08N5

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM 5 Power-Transistor, 80 V IPT012N08N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOSTM 5 Power-Transistor, 80 V IPT012N08N5 HSOF 1 Description Features Tab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resista

 9.2. Size:1186K  infineon
 ipt015n10n5.pdf pdf_icon

IPT019N08N5

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM 5 Power-Transistor, 100 V IPT015N10N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOSTM 5 Power-Transistor, 100 V IPT015N10N5 HSOF 1 Description Features Tab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resis

 9.3. Size:634K  infineon
 ipt012n06n.pdf pdf_icon

IPT019N08N5

IPT012N06N MOSFET HSOF OptiMOSTM Power-Transistor, 60 V Features Tab 100% avalanche tested Superior thermal resistance N-channel 1 Qualified according to JEDEC1) for target applications 2 3 4 5 Pb-free lead plating; RoHS compliant 6 7 8 Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applica

MOSTRAR MÁS

Otros transistores... IPSA70R2K0CE, IPSA70R2K0P7S, IPSA70R450P7S, IPSA70R600CE, IPSA70R600P7S, IPSA70R750P7S, IPSA70R900P7S, IPT012N06N, 2N7002, IPT026N10N5, IPT029N08N5, IPT111N20NFD, IPT210N25NFD, IPT60R022S7, IPT60R028G7, IPT60R040S7, IPT60R050G7