IPT019N08N5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPT019N08N5 Datasheet (PDF)

..1. Size:674K infineon
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IPT019N08N5MOSFETHSOFOptiMOSTM 5 Power-Transistor, 80 VFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 2345 100% avalanche tested678 Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product vali

9.1. Size:1178K infineon
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MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM 5 Power-Transistor, 80 VIPT012N08N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM 5 Power-Transistor, 80 VIPT012N08N5HSOF1 DescriptionFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resista

9.2. Size:1186K infineon
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MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM 5 Power-Transistor, 100 VIPT015N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM 5 Power-Transistor, 100 VIPT015N10N5HSOF1 DescriptionFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resis

9.3. Size:634K infineon
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IPT012N06NMOSFETHSOFOptiMOSTM Power-Transistor, 60 VFeaturesTab 100% avalanche tested Superior thermal resistance N-channel1 Qualified according to JEDEC1) for target applications 2345 Pb-free lead plating; RoHS compliant678 Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial Applica

Otros transistores... IPSA70R2K0CE , IPSA70R2K0P7S , IPSA70R450P7S , IPSA70R600CE , IPSA70R600P7S , IPSA70R750P7S , IPSA70R900P7S , IPT012N06N , 2N7002 , IPT026N10N5 , IPT029N08N5 , IPT111N20NFD , IPT210N25NFD , IPT60R022S7 , IPT60R028G7 , IPT60R040S7 , IPT60R050G7 .