Справочник MOSFET. IPT019N08N5

 

IPT019N08N5 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPT019N08N5
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 231 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 247 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 1100 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0019 Ohm
   Тип корпуса: HSOF-8
 

 Аналог (замена) для IPT019N08N5

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPT019N08N5 Datasheet (PDF)

 ..1. Size:674K  infineon
ipt019n08n5.pdfpdf_icon

IPT019N08N5

IPT019N08N5MOSFETHSOFOptiMOSTM 5 Power-Transistor, 80 VFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 2345 100% avalanche tested678 Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product vali

 9.1. Size:1178K  infineon
ipt012n08n5.pdfpdf_icon

IPT019N08N5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM 5 Power-Transistor, 80 VIPT012N08N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM 5 Power-Transistor, 80 VIPT012N08N5HSOF1 DescriptionFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resista

 9.2. Size:1186K  infineon
ipt015n10n5.pdfpdf_icon

IPT019N08N5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM 5 Power-Transistor, 100 VIPT015N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM 5 Power-Transistor, 100 VIPT015N10N5HSOF1 DescriptionFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resis

 9.3. Size:634K  infineon
ipt012n06n.pdfpdf_icon

IPT019N08N5

IPT012N06NMOSFETHSOFOptiMOSTM Power-Transistor, 60 VFeaturesTab 100% avalanche tested Superior thermal resistance N-channel1 Qualified according to JEDEC1) for target applications 2345 Pb-free lead plating; RoHS compliant678 Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial Applica

Другие MOSFET... IPSA70R2K0CE , IPSA70R2K0P7S , IPSA70R450P7S , IPSA70R600CE , IPSA70R600P7S , IPSA70R750P7S , IPSA70R900P7S , IPT012N06N , K4145 , IPT026N10N5 , IPT029N08N5 , IPT111N20NFD , IPT210N25NFD , IPT60R022S7 , IPT60R028G7 , IPT60R040S7 , IPT60R050G7 .

History: STF32N65M5 | IXTH90P10P

 

 
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