IPT026N10N5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPT026N10N5 Datasheet (PDF)

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IPT026N10N5MOSFETHSOFOptiMOSTM 5 Power-Transistor, 100 VFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 2345 100% avalanche tested678 Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product val

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MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM3 Power-Transistor, 100 VIPT020N10N3Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM3 Power-Transistor, 100 VIPT020N10N3HSOF1 DescriptionFeaturesTab N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Extremely low on-resistance RDS(on)1

9.2. Size:1033K infineon
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IPT029N08N5MOSFETHSOFOptiMOSTM 5 Power-Transistor, 80 VFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 2345 100% avalanche tested678 Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target application

Otros transistores... IPSA70R2K0P7S , IPSA70R450P7S , IPSA70R600CE , IPSA70R600P7S , IPSA70R750P7S , IPSA70R900P7S , IPT012N06N , IPT019N08N5 , IRF9540N , IPT029N08N5 , IPT111N20NFD , IPT210N25NFD , IPT60R022S7 , IPT60R028G7 , IPT60R040S7 , IPT60R050G7 , IPT60R065S7 .