IPT026N10N5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPT026N10N5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 214 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 202 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 1000 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
Paquete / Cubierta: HSOF-8
- Selección de transistores por parámetros
IPT026N10N5 Datasheet (PDF)
ipt026n10n5.pdf

IPT026N10N5MOSFETHSOFOptiMOSTM 5 Power-Transistor, 100 VFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 2345 100% avalanche tested678 Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product val
ipt020n10n3.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM3 Power-Transistor, 100 VIPT020N10N3Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM3 Power-Transistor, 100 VIPT020N10N3HSOF1 DescriptionFeaturesTab N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Extremely low on-resistance RDS(on)1
ipt029n08n5.pdf

IPT029N08N5MOSFETHSOFOptiMOSTM 5 Power-Transistor, 80 VFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 2345 100% avalanche tested678 Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target application
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SSM09N90CGW | FCU5N60 | FQU8P10 | SQD100N03-3M2L | HSCB2307 | AP4506GEM | AONS420A60
History: SSM09N90CGW | FCU5N60 | FQU8P10 | SQD100N03-3M2L | HSCB2307 | AP4506GEM | AONS420A60



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