IPT026N10N5 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPT026N10N5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 214 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 202 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 1000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm

Encapsulados: HSOF-8

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IPT026N10N5 datasheet

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IPT026N10N5

IPT026N10N5 MOSFET HSOF OptiMOSTM 5 Power-Transistor, 100 V Features Tab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 1 N-channel, normal level 2 3 4 5 100% avalanche tested 6 7 8 Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product val

 9.1. Size:1206K  infineon
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IPT026N10N5

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM3 Power-Transistor, 100 V IPT020N10N3 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM3 Power-Transistor, 100 V IPT020N10N3 HSOF 1 Description Features Tab N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Extremely low on-resistance R DS(on) 1

 9.2. Size:1033K  infineon
 ipt029n08n5.pdf pdf_icon

IPT026N10N5

IPT029N08N5 MOSFET HSOF OptiMOSTM 5 Power-Transistor, 80 V Features Tab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 1 N-channel, normal level 2 3 4 5 100% avalanche tested 6 7 8 Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target application

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