IPT026N10N5 Datasheet. Specs and Replacement
Type Designator: IPT026N10N5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 202 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 1000 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: HSOF-8
IPT026N10N5 substitution
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IPT026N10N5 datasheet
ipt026n10n5.pdf
IPT026N10N5 MOSFET HSOF OptiMOSTM 5 Power-Transistor, 100 V Features Tab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 1 N-channel, normal level 2 3 4 5 100% avalanche tested 6 7 8 Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product val... See More ⇒
ipt020n10n3.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM3 Power-Transistor, 100 V IPT020N10N3 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM3 Power-Transistor, 100 V IPT020N10N3 HSOF 1 Description Features Tab N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Extremely low on-resistance R DS(on) 1 ... See More ⇒
ipt029n08n5.pdf
IPT029N08N5 MOSFET HSOF OptiMOSTM 5 Power-Transistor, 80 V Features Tab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 1 N-channel, normal level 2 3 4 5 100% avalanche tested 6 7 8 Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target application... See More ⇒
Detailed specifications: IPSA70R2K0P7S, IPSA70R450P7S, IPSA70R600CE, IPSA70R600P7S, IPSA70R750P7S, IPSA70R900P7S, IPT012N06N, IPT019N08N5, IRF9540N, IPT029N08N5, IPT111N20NFD, IPT210N25NFD, IPT60R022S7, IPT60R028G7, IPT60R040S7, IPT60R050G7, IPT60R065S7
Keywords - IPT026N10N5 MOSFET specs
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