IPT026N10N5 Datasheet and Replacement
Type Designator: IPT026N10N5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 202 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 1000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: HSOF-8
IPT026N10N5 substitution
IPT026N10N5 Datasheet (PDF)
ipt026n10n5.pdf

IPT026N10N5MOSFETHSOFOptiMOSTM 5 Power-Transistor, 100 VFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 2345 100% avalanche tested678 Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product val
ipt020n10n3.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM3 Power-Transistor, 100 VIPT020N10N3Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM3 Power-Transistor, 100 VIPT020N10N3HSOF1 DescriptionFeaturesTab N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Extremely low on-resistance RDS(on)1
ipt029n08n5.pdf

IPT029N08N5MOSFETHSOFOptiMOSTM 5 Power-Transistor, 80 VFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 2345 100% avalanche tested678 Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target application
Datasheet: IPSA70R2K0P7S , IPSA70R450P7S , IPSA70R600CE , IPSA70R600P7S , IPSA70R750P7S , IPSA70R900P7S , IPT012N06N , IPT019N08N5 , IRF1010E , IPT029N08N5 , IPT111N20NFD , IPT210N25NFD , IPT60R022S7 , IPT60R028G7 , IPT60R040S7 , IPT60R050G7 , IPT60R065S7 .
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