IPT60R028G7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPT60R028G7
Código: 60R028G7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 391 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 123 nC
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 99 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Paquete / Cubierta: HSOF-8
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IPT60R028G7 Datasheet (PDF)
ipt60r028g7.pdf
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ipt60r050g7.pdf
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ipt60r065s7.pdf
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IPT60R065S7MOSFETHSOF600V CoolMOS SJ S7 Power DeviceIPT60R065S7 enables the best price performance for low frequencyswitching applications. CoolMOS S7 boasts the lowest Rdson values forTaba HV SJ MOSFET, with distinctive increase of energy efficiency.CoolMOS S7 is optimized for static switching and high current1applications. It is an ideal fit for solid state r
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Liste
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